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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « BO XU »
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BO WU < BO XU < BO YANG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000576 (2012) Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
000703 (2011) Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation
000A05 (2010) Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
000B16 (2010) Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
001061 (2008) Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector
001603 (2006) Influence of dislocation stress field on distribution of quantum dots
001853 (2005) Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition
001D87 (2002) Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
002053 (2000) The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate
002055 (2000) The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n = 1-5) InP substrates
002065 (2000) Strain-compensated quantum cascade lasers operating at room temperature
002098 (2000) High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers
002215 (1999) Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces
002216 (1999) Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces
002234 (1999) Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates
002238 (1999) Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition
002268 (1999) In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates
002366 (1998) Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells
002407 (1998) Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity

List of associated KwdEn.i

Nombre de
documents		Descripteur
17Indium arsenides
13Gallium arsenides
12Experimental study
10Molecular beam epitaxy
10Photoluminescence
9Quantum dots
8Semiconductor materials
6Atomic force microscopy
6III-V semiconductors
5III-V compound
5Ternary compounds
5Thin films
4Binary compounds
4Crystal growth from vapors
4Heteroepitaxy
4Self assembly
4Temperature dependence
3Aluminium arsenides
3Epitaxial layers
3Growth mechanism
3Island structure
3Nanostructured materials
3Self-assembly
3XRD
2Annealing
2Characterization
2Chemical composition
2Crystal orientation
2Excitons
2High density
2Modulation doping
2Morphology
2Nanostructures
2Quantum cascade lasers
2Quantum system
2Quantum wells
2Self organization
2Semiconductor lasers
2Solid solutions
2Substrates
2TEM
2Temperature effects
2Two-dimensional systems
1Absorption spectrum
1Alignment
1Aluminium Arsenides
1Ambient temperature
1Aqueous solutions
1Arsenic
1Arsenides
1Binary compound
1Bound state
1Cesium
1Coalescence
1Composition effect
1Conductivity
1Continuum
1Crystal growth habit
1Crystal structure
1Crystallization
1Deep level
1Electrodeposition
1Electron gas
1Energy-level transitions
1Epitaxy
1Excitation intensity
1Excited state
1Gallium Arsenides
1Gallium antimonides
1Hall mobility
1High electron mobility transistor
1II-VI semiconductors
1Indium
1Indium Arsenides
1Indium Phosphides
1Infrared detector
1Infrared laser
1Interfaces
1Ion implantation
1MOCVD
1Microelectronic fabrication
1Misfit dislocations
1Molecular beam condensation
1Multilayers
1Nucleation
1Operating conditions
1Optical transition
1Optoelectronics
1Order disorder
1Ordering
1Phonon mode
1Photodetector
1Polarization
1Preferred orientation
1Quantity ratio
1Quantization
1Quantum dot
1Quenching
1RHEED
1Raman scattering

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