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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « B. Zhang »
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B. Zeng < B. Zhang < B. Zhao  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000351 (2012) Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows
000381 (2012) Tailoring the in-plane epitaxial relationship of InN films on (1 11)SrTiO3 substrates by substrate pretreatment
000A75 (2010) Performance of InSnZrO as transparent conductive oxides
000F92 (2008) Transparent conductive Ta2O5-codoped ITO thin films prepared by different heating process
001351 (2007) Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study
002332 (1998-03-30) Optical modes within III-nitride multiple quantum well microdisk cavities
002372 (1998) Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities
002373 (1998) Optical disk mode pattern of InGaP microdisks emitting at 0.65 μm
002376 (1998) Operating characteristics of InGaAsP/GaAs SCH SQW high power lasers by LPE
002433 (1998) 808nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE
002716 (1995) Growth of GaInAsSb alloys by metalorganic chemical vapor deposition
002719 (1995) GaInAsSb/GaSb infrared photodetectors prepared by MOCVD

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Semiconductor lasers
3Binary compounds
3Epitaxy
3Experimental study
3Gallium Arsenides
3Indium Phosphides
3MOCVD
3Photoluminescence
3Quaternary compounds
2Absorption spectra
2Carrier density
2Energy gap
2Gallium arsenides
2High power
2Indium arsenides
2Indium nitride
2Microstructure
2Optical properties
2Quantum wells
2SCH lasers
2Semiconductor materials
2Ternary compounds
2Thin films
2XRD
1Absorption coefficients
1Absorption edge
1Aluminium Arsenides
1Aluminium Nitrides
1Aluminium compounds
1Aluminium nitrides
1Annealing
1Arsenic Antimonides
1Atmospheric pressure
1Atomic arrangement
1Atomic force microscopy
1Bias voltage
1Binary compound
1Blende structure
1Burstein Moss effect
1CVD
1Carrier mobility
1Cathode sputtering
1Characterization
1Chemical vapor deposition
1Codoping
1Cross section
1Crystal growth from vapors
1Crystal perfection
1Dark current
1Detection
1Doping
1Electrical characteristic
1Energy-level transitions
1Film growth
1Fluorescence
1Gallium Antimonides
1Gallium Nitrides
1Gallium Phosphides
1Gallium antimonides
1Gallium compounds
1Gallium nitrides
1Heat treatments
1Heterojunction
1III-V compound
1III-V semiconductors
1Indium Antimonides
1Indium Nitrides
1Indium antimonides
1Indium compounds
1Indium oxide
1Infrared detector
1Inorganic compounds
1Laser cavities
1Laser cavity resonators
1Laser modes
1Line shape
1Linear phase
1Liquid phase
1Microelectronic fabrication
1Molecular beam epitaxy
1Multiple quantum well
1Operating mode
1Optical characteristic
1Optical constants
1Optical modes
1Optical pumping
1Organometallic compound
1Performance characteristic
1Phase transformations
1Photodetector
1Pretreatment
1Production process
1Quantum dots
1Quantum well lasers
1Quaternary compound
1Reflection spectrum
1Reflectivity
1Refractive index
1Response latency
1Semiconductor superlattices

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