Serveur d'exploration sur l'Indium - Analysis (Chine)

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B. Xiong < B. Xu < B. Y. Sun  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 60.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000C08 (2010) Different growth mechanisms of bimodal InAs/GaAs QDs
000C34 (2010) Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
001009 (2008) Temperature dependence of surface quantum dots grown under frequent growth interruption
001444 (2007) Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers
001522 (2006) Temperature dependence of surface quantum dots grown under frequent growth interruption
001539 (2006) Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate
001579 (2006) Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001594 (2006) MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
001598 (2006) Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate
001687 (2006) Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
001711 (2005) The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots
001713 (2005) The effect of In content on high-density InxGa1-xAs quantum dots
001791 (2005) Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001807 (2005) High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array
001832 (2005) Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001)
001863 (2005) A novel method for positioning of InAs islands on GaAs (110)
001923 (2004) Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
001973 (2004) Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer
001998 (2004) InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate
001A07 (2004) Growth of nanostructures on composition-modulated InAlAs surfaces
001B29 (2003) The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing

List of associated KwdEn.i

Nombre de
documents
Descripteur
52Indium arsenides
43Photoluminescence
40Gallium arsenides
40Quantum dots
39Experimental study
38Molecular beam epitaxy
32III-V semiconductors
21Crystal growth from vapors
20Aluminium arsenides
18Atomic force microscopy
15Semiconductor materials
14Ternary compounds
11Binary compounds
11Nanostructures
11Self assembly
10Growth mechanism
9Epitaxial layers
8Buffer layer
7Island structure
7Multilayers
7Nanostructured materials
7Temperature dependence
7Thin films
6Morphology
6Optical properties
6Quantum wires
6Rapid thermal annealing
6Self-assembly
6Size effect
6Thickness
6Transmission electron microscopy
5Growth rate
5Heteroepitaxy
5Interdiffusion
5Microstructure
5RHEED
5Self organization
5TEM
5Temperature effects
5XRD
4Indium compounds
4Self-assembled layers
4Strained layer
4Surface structure
3Characterization
3Crystal growth
3Crystal orientation
3Fabrication property relation
3Indium phosphides
3Integrated intensity
3Line widths
3Modulation
3Surface morphology
3Surfaces
3Ultrathin films
3Wetting
2Chemical composition
2Coatings
2Continuous wave lasers
2Crystal seeds
2Current density
2Defects
2Density
2Diffusion
2Dimension spectrum
2Dimensions
2Dislocations
2Electronic density of states
2Experiments
2Heterojunctions
2High temperature
2III-V compound
2Inorganic compounds
2Monolayers
2Optical anisotropy
2Ordering
2Quantum dot
2Quantum dot lasers
2Quantum wells
2Reflection spectrum
2Segregation
2Semiconductor lasers
2Semiconductor quantum dots
2Solid source molecular beam epitaxy
2Spectral line shift
2Stress effects
2Stress relaxation
2Stresses
2Substrates
2Superlattices
2Superluminescent diodes
2Thermal stability
1Absorption spectroscopy
1Active region
1Adatoms
1Alignment
1Aluminium compounds
1Annealing
1Application
1Atomic layer method

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