IndiumV3, Chine, Analysis, indexItem, Author.i, B. Shen

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List of bibliographic references

Number of relevant bibliographic references: 11.

Ident.	Authors (with country if any)	Title
000D18 (2009)		Superconductivity in the hole-doped oxy-arsenide RE1-xSrxFeAsO (RE = La, Pr)
001370 (2007)		Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
001513 (2006)		Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001703 (2005)		Thermal annealing of InN films grown by metal-organic chemical vapor deposition
001749 (2005)		Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001865 (2005)		A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
001915 (2004-02-23)		Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)]
001B37 (2003)		Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
001B71 (2003)		Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures
001C20 (2003)		Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures
001C26 (2003)		Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer

List of associated KwdEn.i

Nombre de documents	Descripteur
8	Indium nitrides
6	Aluminium nitrides
6	Gallium nitrides
5	Binary compounds
5	Semiconductor materials
5	Ternary compounds
4	Experimental study
4	Heterostructures
3	Modulation doping
3	Poisson equation
3	Two-dimensional electron gas
2	Gold
2	III-V semiconductors
2	IV characteristic
2	Inorganic compounds
2	Magnetoresistance
2	Platinum
2	Quantum wells
2	Schroedinger equation
2	Self consistency
2	Strained layer
2	Subband
2	Transport processes
2	XRD
1	Aluminium
1	Aluminium compounds
1	Ammonia
1	Annealing
1	Atomic force microscopy
1	Band structure
1	Barrier height
1	Barrier layer
1	Buffer layer
1	CVD
1	Carrier density
1	Chemical treatment
1	Comparative study
1	Compressive stress
1	Computing method
1	Conduction band
1	Conduction bands
1	Confinement
1	Contact resistance
1	Critical field
1	Crystal growth from vapors
1	Crystal nucleation
1	Cubic lattices
1	Distribution functions
1	Doping
1	Doping profile
1	Electron distribution
1	Electron gas model
1	Electron-defect interactions
1	Experimental result
1	Field effect transistor
1	Field effect transistors
1	Films
1	Gallium compound
1	Gallium compounds
1	Hall effect
1	Hole density
1	Indium additions
1	Indium compound
1	Indium compounds
1	Integrated intensity
1	Interface reaction
1	Interfacial layer
1	Iron based oxyarsenide
1	Lattice parameters
1	Low pressure
1	MOCVD
1	Metal-semiconductor contacts
1	Metallic thin films
1	Metals
1	Misfit dislocations
1	Multilayers
1	Nitrides
1	Nitrogen compounds
1	Ohmic contacts
1	Piezoelectricity
1	Polarization
1	Polarization mode
1	Quantum transport
1	Roughness
1	Scanning electron microscopes
1	Scanning electron microscopy
1	Schottky barriers
1	Schrödinger equation
1	Semiconductor quantum wells
1	Shubnikov-de Haas effect
1	Solid-solid interfaces
1	Superconducting transitions
1	Superconductivity
1	Surface treatments
1	Temperature
1	Theoretical study
1	Thermal annealing
1	Titanium
1	Two dimensional model
1	Waveform

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List of bibliographic references

List of associated KwdEn.i

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Index « Auteurs » - entrée « B. Shen »