A. Yoshikawa < A. Z. Li < A. Zakharova

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 42.
[0-20] [0 - 20][0 - 42][20-40]

Ident.	Authors (with country if any)	Title
000078 (2013)		The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm
000274 (2013)		Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors
000D67 (2009)		Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE
000D81 (2009)		Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
000D84 (2009)		Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range
000E48 (2009)		Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
001368 (2007)		Key issues associated with low threshold current density for InP-based quantum cascade lasers
001784 (2005)		Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy
001810 (2005)		Heat management of MBE-grown antimonide lasers
001842 (2005)		Continuous-wave operation quantum cascade lasers at 7.95 μm
001B30 (2003)		The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001B95 (2003)		High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
001C25 (2003)		Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
001D60 (2002)		Interband impact ionization in THz-driven InAs/AlSb heterostructures
001E87 (2001)		Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers
001F09 (2001)		Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
001F25 (2001)		Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
001F27 (2001)		MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
001F44 (2001)		Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT
001F66 (2001)		Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
001F68 (2001)		Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures

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List of associated KwdEn.i

Nombre de documents	Descripteur
26	Gallium arsenides
26	Indium arsenides
25	Experimental study
23	Molecular beam epitaxy
15	GSMBE method
13	Aluminium arsenides
13	Gallium antimonides
13	III-V semiconductors
12	Photoluminescence
11	Indium antimonides
11	Ternary compounds
10	Quaternary compounds
9	Aluminium antimonides
9	Semiconductor materials
8	Crystal growth from vapors
8	Quantum wells
8	Semiconductor lasers
8	XRD
7	Indium phosphides
7	Multiple quantum well
7	Temperature dependence
6	Excitons
6	Thin films
5	Binary compounds
5	Growth mechanism
5	III-V compound
4	Absorption spectra
4	Current density
4	Doping
4	Epitaxial layers
4	Gallium phosphides
4	Indium compounds
4	Infrared laser
4	Laser diodes
4	Microelectronic fabrication
4	Performance evaluation
4	Photodetectors
4	Quantum cascade laser
4	Quantum well lasers
4	Threshold current
3	Binary compound
3	Characterization
3	Dark current
3	Heterojunctions
3	Indium phosphide
3	Line widths
3	Mismatch lattice
3	Multilayers
3	Optimization
3	Output power
3	Photodiodes
3	Quaternary compound
3	Theoretical study
2	Activation energy
2	Aluminium compounds
2	Antimonides arsenides
2	Band structure
2	Buffer layer
2	Carrier mobility
2	Electron-phonon interactions
2	Emission spectra
2	Energy-level transitions
2	GSMBE
2	Gallium phosphide
2	High electron mobility transistor
2	Infrared detector
2	Interband transitions
2	Internal strains
2	Modulation doping
2	Nanostructured materials
2	Operating mode
2	Photodetector
2	Polaritons
2	Pseudomorphic transistor
2	Strained quantum well
2	Strains
2	Subband
2	Superlattices
2	Temperature distribution
2	Ternary compound
2	Thick films
2	Thickness
1	Abrupt heterojunction
1	Absorption spectroscopy
1	Ambient temperature
1	Antimony
1	Application
1	Arrhenius equation
1	Arsenic Antimonides
1	Arsenic additions
1	Arsenides
1	Atomic force microscopy
1	Band offset
1	Bipolar transistors
1	Bragg reflection
1	Calculation methods
1	Carrier concentration
1	Carrier density
1	Charge carrier generation
1	Compressive stress

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