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Serveur d'exploration sur l'Indium

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Le cluster HUAIZHE XU - WEIHONG JIANG

Terms

5HUAIZHE XU
4WEIHONG JIANG
8WEI ZHOU
8QIAN GONG
19BO XU
43ZHANGUO WANG
5SHAOYAN YANG
6SHENGCHUN QU

Associations

Freq.WeightAssociation
40.894HUAIZHE XU - WEIHONG JIANG
40.707WEI ZHOU - WEIHONG JIANG
40.632HUAIZHE XU - WEI ZHOU
50.625QIAN GONG - WEI ZHOU
70.568BO XU - WEI ZHOU
100.350BO XU - ZHANGUO WANG
50.341SHAOYAN YANG - ZHANGUO WANG
60.323WEI ZHOU - ZHANGUO WANG
50.311SHENGCHUN QU - ZHANGUO WANG
40.305WEIHONG JIANG - ZHANGUO WANG
40.273HUAIZHE XU - ZHANGUO WANG
40.216QIAN GONG - ZHANGUO WANG
Documents par ordre de pertinence
002234 (1999) Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates
002268 (1999) In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates
002215 (1999) Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces
002216 (1999) Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces
002366 (1998) Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells
002407 (1998) Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity
000703 (2011) Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation
000059 (2013) Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells
000518 (2012) Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
000758 (2011) Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
000785 (2011) MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
000C62 (2009) Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution
000C92 (2009) The application of SnS nanoparticles to bulk heterojunction solar cells
001014 (2008) Synthesis of MDMO-PPV capped PbS quantum dots and their application to solar cells
001061 (2008) Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector
001527 (2006) Synthesis and structures of morphology-controlled ZnO nano- and microcrystals
001603 (2006) Influence of dislocation stress field on distribution of quantum dots
001D36 (2002) Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
002055 (2000) The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n = 1-5) InP substrates
002238 (1999) Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition
002246 (1999) Quantum-dot superluminescent diode : A proposal for an ultra-wide output spectrum
000314 (2013) Chemical vapor deposition of graphene on liquid metal catalysts
000576 (2012) Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
000665 (2011) Theoretical study on InxGa1-xN/GaN quantum dots solar cell
000682 (2011) The I-V characteristics of InAs/GaAs quantum dot laser
000713 (2011) Spin splitting modulated by uniaxial stress in InAs nanowires
000767 (2011) Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer
000908 (2011) Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
000940 (2011) Behavioural investigation of InN nanodots by surface topographies and phase images
000948 (2011) An investigation on IXxGa1-xN/GaN multiple quantum well solar cells
000A05 (2010) Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
000B16 (2010) Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
000B58 (2010) External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire
000B72 (2010) Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device
000D39 (2009) Solid source MBE growth of quantum cascade lasers
000F68 (2009) A mini-staged multi-stacked quantum cascade laser for improved optical and thermal performance
000F95 (2008) Thickness dependence of structural, electrical and optical properties of indium tin oxide (ITO) films deposited on PET substrates
000F96 (2008) Theoretical design and performance of InxGa1-xN two-junction solar cells
001183 (2008) Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
001440 (2007) Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
001674 (2006) Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
001813 (2005) Growth and characterization of InN on sapphire substrate by RF-MBE
001853 (2005) Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition
001952 (2004) Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
001A29 (2004) Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
001A34 (2004) Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
001B43 (2003) Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
001B46 (2003) Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
001D18 (2002) The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
001D19 (2002) The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells
001D87 (2002) Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
001E10 (2002) A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
002053 (2000) The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate
002065 (2000) Strain-compensated quantum cascade lasers operating at room temperature
002098 (2000) High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers
002121 (2000) Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
002233 (1999) Structural and optical characterization of InAs nanostructures grown on high-index InP substrates
002240 (1999) Self-organization of wire-like InAs nanostructures on InP
Wicri

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