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Serveur d'exploration sur l'Indium

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Le cluster N. F. Sun - T. N. Sun

Terms

5N. F. Sun
6T. N. Sun
9Y. W. Zhao

Associations

Freq.WeightAssociation
50.913N. F. Sun - T. N. Sun
50.745N. F. Sun - Y. W. Zhao
50.680T. N. Sun - Y. W. Zhao
Documents par ordre de pertinence
001804 (2005) Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime
001A42 (2004) Annealing ambient controlled deep defect formation in InP
002134 (2000) Carrier mobility distribution in annealed undoped LEC InP material
002296 (1998-11-15) Positron-lifetime study of compensation defects in undoped semi-insulating InP
002326 (1998-04-27) Formation of PIn defect in annealed liquid-encapsulated Czochralski InP
001224 (2008) Annihilation of deep level defects in InP through high temperature annealing
001644 (2006) Electron irradiation-induced defects in InP pre-annealed at high temperature
001C69 (2002-08-15) Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance
001D45 (2002) Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour
002989 (1985) Infrared reflectance study of n-type InP grown by the LEC method
Wicri

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