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Serveur d'exploration sur l'Indium

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Le cluster X. D. Hu - Z. Z. Chen

Terms

5X. D. Hu
6Z. Z. Chen
4Z. X. Qin
10G. Y. Zhang
6Z. J. Yang
5T. J. Yu
5Y. Z. Tong

Associations

Freq.WeightAssociation
50.913X. D. Hu - Z. Z. Chen
40.894X. D. Hu - Z. X. Qin
40.816Z. X. Qin - Z. Z. Chen
60.775G. Y. Zhang - Z. Z. Chen
60.775G. Y. Zhang - Z. J. Yang
40.800T. J. Yu - Y. Z. Tong
40.730Y. Z. Tong - Z. J. Yang
40.730T. J. Yu - Z. Z. Chen
40.730T. J. Yu - Z. J. Yang
50.707G. Y. Zhang - Y. Z. Tong
50.707G. Y. Zhang - X. D. Hu
50.707G. Y. Zhang - T. J. Yu
40.667Z. J. Yang - Z. Z. Chen
40.632G. Y. Zhang - Z. X. Qin
Documents par ordre de pertinence
001947 (2004) Study of photoluminescence and absorption in phase-separation InGaN films
001B89 (2003) InGaN/GaN MQW high brightness LED grown by MOCVD
001262 (2007) The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
001971 (2004) Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off
000823 (2011) Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
001A45 (2004) An approach to determine the chemical composition in InGaN/GaN multiple quantum wells
000560 (2012) Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes
002406 (1998) Growth and doping characteristics of InGaN films grown by low pressure MOCVD
002114 (2000) Elastic strain in InGaN and AlGaN layers
002284 (1999) Effect of erbium concentration on upconversion luminescence of Er:Yb :phosphate glass exited by InGaAs laser diode
Wicri

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