Freq.	Weight	Association
5	0.674	Wei-Chou Hsu - Yu-Shyan Lin
4	0.603	Wei-Chou Hsu - Yen-Wei Chen

Documents par ordre de pertinence

001A62 (2003-11)		Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
001E75 (2001-01-15)		An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel
001B01 (2003-05)		Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage
001D05 (2002-02-01)		Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer
001F96 (2000-10-15)		High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor
002443 (1997-10-15)		Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions
002467 (1997-02-24)		Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure
001887 (2004-05-03)		Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor
002649 (1995-07-17)		Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure
002673 (1995-03-20)		Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure
002674 (1995-03-15)		Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch

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