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Serveur d'exploration sur l'Indium

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Le cluster Y. Jin - Y. Ning

Terms

7Y. Jin
7Y. Ning
7S. Li
16Y. Liu
16L. Wang
10M. H. Xie
5S. Y. Tong
10X. Zhang

Associations

Freq.WeightAssociation
50.714Y. Jin - Y. Ning
40.571S. Li - Y. Jin
40.378Y. Liu - Y. Ning
40.378L. Wang - Y. Ning
50.707M. H. Xie - S. Y. Tong
40.316M. H. Xie - Y. Liu
40.316L. Wang - X. Zhang
40.250L. Wang - Y. Liu
Documents par ordre de pertinence
002381 (1998) Microcavity effect and InGaAs/InGaAsP MQW microdisk laser
002386 (1998) Linewidth in microdisk laser
002716 (1995) Growth of GaInAsSb alloys by metalorganic chemical vapor deposition
001800 (2005) In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
001A05 (2004) High-power vertical cavity surface emitting laser with good performances
001A54 (2003-12-22) InN island shape and its dependence on growth condition of molecular-beam epitaxy
001A66 (2003-10-15) Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
002388 (1998) Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers
002476 (1997) Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition
000360 (2012) Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials
001B86 (2003) Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
001E28 (2001-09-17) Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
002350 (1998) The study of single mode 650nm AlGaInP quantum well laser diodes for DVD
002376 (1998) Operating characteristics of InGaAsP/GaAs SCH SQW high power lasers by LPE
002398 (1998) High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD
002433 (1998) 808nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE
002505 (1997) Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition
002593 (1996) Scanning electron acoustic microscopy of semiconductor materials
002719 (1995) GaInAsSb/GaSb infrared photodetectors prepared by MOCVD
000254 (2013) Ferromagnetism in Cr doped In2O3
000382 (2012) Tailoring martensitic transformation and martensite structure of NiMnIn alloy by Ga doping In
000454 (2012) Ordered versus random nucleation of InN islands grown by molecular beam epitaxy
000911 (2011) Effect of Ce-Doping on Thermoelectric Properties in PbTe Alloys Prepared by Spark Plasma Sintering
000A38 (2010) Structural and electronic properties of amorphous InSb from first principles study
000B70 (2010) Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection
000C75 (2009) Thermoelectric properties of indium-filled skutterudites prepared by combining solvothermal synthesis and melting
000E75 (2009) Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers
000E77 (2009) Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays
000F77 (2009) 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration
001043 (2008) Self-pulsation in a two-section DFB laser with a varied ridge width
001299 (2007) Structural properties of oxygen on InN(0001) surface
001391 (2007) Growth and characterization of electro-deposited Cu2O and Cu thin films by amperometric I-T method on ITO/glass substrate
001495 (2007) 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
001784 (2005) Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy
001877 (2004-06-15) Identifying Au-based Te alloys for optical data storage
001921 (2004) Tunneling characteristics of octadecyl derivatives on tin and indium electrodes
001961 (2004) Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers
001A11 (2004) First-principles study of indium on silicon (1 0 0): the structure, defects and interdiffusion
001B30 (2003) The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001D51 (2002) Numerical simulation of macrosegregation of indium phase in rapidly solidified Al-In hypermonotectic sheets
001F97 (2000-10-02) X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
002117 (2000) Effects of distance between wells on band structure and characteristics of InGaAs/InGaAsP strain-compensated multiple quantum well lasers
002326 (1998-04-27) Formation of PIn defect in annealed liquid-encapsulated Czochralski InP
002400 (1998) High performance 1.55μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
002491 (1997) Study of Cr overlayer on InP(100) by synchrotron radiation photoemission
002553 (1996-10-15) Effective-mass theory for InAs/GaAs strained coupled quantum dots
002595 (1996) Preparation of nanocrystalline indium powders by use of γ-ray radiation
Wicri

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