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Serveur d'exploration sur l'Indium

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Le cluster H. L. Zhu - J. Q. Pan

Terms

12H. L. Zhu
11J. Q. Pan
7S. Liang
22W. Wang
10L. J. Zhao
6F. Zhou
8W. Feng

Associations

Freq.WeightAssociation
90.783H. L. Zhu - J. Q. Pan
70.764H. L. Zhu - S. Liang
110.707J. Q. Pan - W. Wang
110.677H. L. Zhu - W. Wang
70.667J. Q. Pan - L. J. Zhao
90.607L. J. Zhao - W. Wang
60.548H. L. Zhu - L. J. Zhao
60.522F. Zhou - W. Wang
40.516F. Zhou - L. J. Zhao
40.492F. Zhou - J. Q. Pan
60.483S. Liang - W. Wang
40.456J. Q. Pan - S. Liang
40.447L. J. Zhao - W. Feng
40.426J. Q. Pan - W. Feng
40.408H. L. Zhu - W. Feng
40.302W. Feng - W. Wang
Documents par ordre de pertinence
001400 (2007) Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
001588 (2006) Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
001589 (2006) Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers
000812 (2011) InP-based deep-ridge NPN transistor laser
000F52 (2009) Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates
001495 (2007) 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
001591 (2006) Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission
001621 (2006) Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
001845 (2005) Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD
000F53 (2009) Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
001615 (2006) High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD
001658 (2006) Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
000E75 (2009) Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers
000F77 (2009) 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration
001043 (2008) Self-pulsation in a two-section DFB laser with a varied ridge width
001614 (2006) High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
002403 (1998) Growth of Fe doped semi-insulating InP by LP-MOCVD
002435 (1998) 1.3μm InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser
000401 (2012) Structure of AgI-doped Ge-In-S glasses: Experiment, reverse Monte Carlo modelling, and density functional calculations
000815 (2011) InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm,Ho:YVO4 laser
000D28 (2009) Structure and optical properties of SnS thin film prepared by pulse electrodeposition
000E77 (2009) Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays
002415 (1998) Effect of oxygen concentration and annealing treatment on the optical properties of the transparent conductive CdIn2O4 thin films
002544 (1996-11-15) High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
002627 (1996) (5-benzyldibenzo[b,d]phosphole 5-oxide)-trimethylindium
002820 (1993) Structure of InxGa1-xAs/GaAs strained-layer superlattices
002886 (1992) Characterization of InxGa1-xAs/GaAs strained-layer superlattices by transmission electron microscopy and convergent beam electron diffraction
002902 (1991) Photomodulated transmission spectroscopy of the intersubband transitions in strained In1-xGaxAs/GaAs multiple quantum wells under hydrostatic pressure
Wicri

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