Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder
Identifieur interne : 002541 ( Chine/Analysis ); précédent : 002540; suivant : 002542Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder
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Abstract
The conduction-band effective masses in InxGa1-xAs with a complete range of composition, and InAlGaAs and InGaAsP alloys covering the complete range of lattice matched to InP have been determined by far-infrared optically detected cyclotron resonance and magnetophotoconductivity measurements. It is found that the measured effective masses as a function of alloy composition are heavier than the values predicted from the five-band k.p theory. We show that this discrepancy can be resolved by including the effect of disorder-induced potential fluctuations that causes the wave function mixing between conduction and valence bands. We find that the strength of the potential fluctuations can be well described in terms of the Phillips electronegativity difference related to chemical disorder. © 1996 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder</title><author><name sortKey="Fan, J C" uniqKey="Fan J">J. C. Fan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Physics, National Taiwan University, Taipei, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name sortKey="Chen, Y F" uniqKey="Chen Y">Y. F. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Physics, National Taiwan University, Taipei, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0114969</idno><date when="1996-12-15">1996-12-15</date><idno type="stanalyst">PASCAL 97-0114969 AIP</idno><idno type="RBID">Pascal:97-0114969</idno><idno type="wicri:Area/Main/Corpus">018926</idno><idno type="wicri:Area/Main/Repository">019665</idno><idno type="wicri:Area/Chine/Extraction">002541</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7118</term><term>7120N</term><term>7640</term><term>7240</term><term>7280E</term><term>7123</term><term>Etude expérimentale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The conduction-band effective masses in In<sub>x</sub>Ga<sub>1-x</sub>As with a complete range of composition, and InAlGaAs and InGaAsP alloys covering the complete range of lattice matched to InP have been determined by far-infrared optically detected cyclotron resonance and magnetophotoconductivity measurements. It is found that the measured effective masses as a function of alloy composition are heavier than the values predicted from the five-band k.p theory. We show that this discrepancy can be resolved by including the effect of disorder-induced potential fluctuations that causes the wave function mixing between conduction and valence bands. We find that the strength of the potential fluctuations can be well described in terms of the Phillips electronegativity difference related to chemical disorder. © 1996 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>80</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder</s1></fA08><fA11 i1="01" i2="1"><s1>FAN (J. C.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHEN (Y. 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It is found that the measured effective masses as a function of alloy composition are heavier than the values predicted from the five-band k.p theory. We show that this discrepancy can be resolved by including the effect of disorder-induced potential fluctuations that causes the wave function mixing between conduction and valence bands. 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