IndiumV3, Chine, Analysis, bibRecord, 001A66

Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

Identifieur interne : 001A66 ( Chine/Analysis ); précédent : 001A65; suivant : 001A67

Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

Auteurs : RBID : Pascal:03-0495059

Descripteurs français

Pascal (Inist)
- 6855, 6143H, 8115H, Etude expérimentale, Indium composé, Semiconducteur III-V, Structure îlot, Couche épitaxique semiconductrice, Nucléation, Gallium composé.

English descriptors

KwdEn :
- Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Island structure, Nucleation, Semiconductor epitaxial layers.

Abstract

The scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i=1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.

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Le document en format XML

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<front><div type="abstract" xml:lang="en">The scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i=1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.</div>
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Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri