IndiumV3, Chine, Analysis, bibRecord, 000B06

Large blue shift of the absorption edge in modified potential InGaAs/InAIAs coupled quantum wells

Identifieur interne : 000B06 ( Chine/Analysis ); précédent : 000B05; suivant : 000B07

Large blue shift of the absorption edge in modified potential InGaAs/InAIAs coupled quantum wells

Auteurs : RBID : Pascal:11-0145594

Descripteurs français

Pascal (Inist)
- Dispositif optoélectronique, Optique intégrée, Puits quantique, Composé ternaire, Gallium Arséniure, Indium Arséniure, As Ga In, InGaAs, 0130C, 8560, 4279.

English descriptors

KwdEn :
- Gallium Arsenides, Indium Arsenides, Integrated optics, Optoelectronic devices, Quantum wells, Ternary compounds.

Abstract

We designed and experimentally reported modified potential InGaAs/InAlAs coupled quantum wells. In this structure, a large blue shift of the absorption edge of more than 35 meV is obtained at a reverse bias of -4 V. This predicts that a large negative electrorefractive index change can be achieved at longer wavelength region of the absorption edge.

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Pascal:11-0145594

Le document en format XML

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<author><name>ZHIXIN XU</name>
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<s2>Hangzhou 310023</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Hangzhou 310023</wicri:noRegion>
</affiliation>
</author>
<author><name>CHANGRONG WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>College of Science, Zhejiang University of Science and Technology</s1>
<s2>Hangzhou 310023</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Hangzhou 310023</wicri:noRegion>
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</author>
<author><name>ZHEFENG YUAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>College of Science, Zhejiang University of Science and Technology</s1>
<s2>Hangzhou 310023</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Hangzhou 310023</wicri:noRegion>
</affiliation>
</author>
<author><name>WEI QI</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Information and Electrial Engineering, Zhejiang University City College</s1>
<s2>Hangzhou 310015</s2>
<s3>CHN</s3>
<sZ>4 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Hangzhou 310015</wicri:noRegion>
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<publicationStmt><idno type="inist">11-0145594</idno>
<date when="2010">2010</date>
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<seriesStmt><idno type="ISSN">0277-786X</idno>
<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
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<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>As Ga In</term>
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<term>0130C</term>
<term>8560</term>
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<front><div type="abstract" xml:lang="en">We designed and experimentally reported modified potential InGaAs/InAlAs coupled quantum wells. In this structure, a large blue shift of the absorption edge of more than 35 meV is obtained at a reverse bias of -4 V. This predicts that a large negative electrorefractive index change can be achieved at longer wavelength region of the absorption edge.</div>
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<fC01 i1="01" l="ENG"><s0>We designed and experimentally reported modified potential InGaAs/InAlAs coupled quantum wells. In this structure, a large blue shift of the absorption edge of more than 35 meV is obtained at a reverse bias of -4 V. This predicts that a large negative electrorefractive index change can be achieved at longer wavelength region of the absorption edge.</s0>
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   |texte=   Large blue shift of the absorption edge in modified potential InGaAs/InAIAs coupled quantum wells
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Large blue shift of the absorption edge in modified potential InGaAs/InAIAs coupled quantum wells

Large blue shift of the absorption edge in modified potential InGaAs/InAIAs coupled quantum wells

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri