Quantum well infrared photodetector simultaneously working in two atmospheric windows
Identifieur interne : 000A57 ( Chine/Analysis ); précédent : 000A56; suivant : 000A58Quantum well infrared photodetector simultaneously working in two atmospheric windows
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Abstract
We have demonstrated a two-contact quantum well infrared photodetector (QWIP) exhibiting simultaneous photoresponse in both the mid- and the long-wavelength atmospheric windows of 3-5 μm and of 8-12 μm. The structure of the device was achieved by sequentially growing a mid-wavelength QWIP part followed by a long-wavelength QWIP part separated by an n-doped layer. Compared with the conventional dual-band QWIP device utilizing three ohmic contacts, our QWIP is promising to greatly facilitate two-color focal plane array (FPA) fabrication by reducing the number of the indium bumps per pixel from three to one just like a monochromatic FPA fabrication and to increase the FPA fill factor by reducing one contact per pixel; another advantage may be that this QWIP FPA boasts broadband detection capability in the two atmospheric windows while using only a monochromatic readout integrated circuit. We attributed this simultaneous broadband detection to the different distributions of the total bias voltage between the mid- and long-wavelength QWIP parts.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Quantum well infrared photodetector simultaneously working in two atmospheric windows</title><author><name sortKey="Huo, Y H" uniqKey="Huo Y">Y. H. Huo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Ma, W Q" uniqKey="Ma W">W. Q. Ma</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Zhang, Y H" uniqKey="Zhang Y">Y. H. Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Chen, L H" uniqKey="Chen L">L. H. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Shi, Y L" uniqKey="Shi Y">Y. L. Shi</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Basic Research and Development, Kunming Institute of Physics</s1><s2>Kunming 650023</s2><s3>CHN</s3><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Kunming 650023</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0475338</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0475338 INIST</idno><idno type="RBID">Pascal:10-0475338</idno><idno type="wicri:Area/Main/Corpus">003B78</idno><idno type="wicri:Area/Main/Repository">003A27</idno><idno type="wicri:Area/Chine/Extraction">000A57</idno></publicationStmt><seriesStmt><idno type="ISSN">0947-8396</idno><title level="j" type="abbreviated">Appl. phys., A Mater. sci. process. : (Print)</title><title level="j" type="main">Applied physics. A, Materials science & processing : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bias voltage</term><term>Focal plane arrays</term><term>Infrared detector</term><term>Integrated circuit</term><term>Ohmic contact</term><term>Quantum well</term><term>Readout electronics</term><term>Wide band</term><term>n type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Détecteur IR</term><term>Contact ohmique</term><term>Matrice plan focal</term><term>Large bande</term><term>Electronique de mesure</term><term>Circuit intégré</term><term>Tension polarisation</term><term>Puits quantique</term><term>Semiconducteur type n</term><term>0757K</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have demonstrated a two-contact quantum well infrared photodetector (QWIP) exhibiting simultaneous photoresponse in both the mid- and the long-wavelength atmospheric windows of 3-5 μm and of 8-12 μm. The structure of the device was achieved by sequentially growing a mid-wavelength QWIP part followed by a long-wavelength QWIP part separated by an n-doped layer. Compared with the conventional dual-band QWIP device utilizing three ohmic contacts, our QWIP is promising to greatly facilitate two-color focal plane array (FPA) fabrication by reducing the number of the indium bumps per pixel from three to one just like a monochromatic FPA fabrication and to increase the FPA fill factor by reducing one contact per pixel; another advantage may be that this QWIP FPA boasts broadband detection capability in the two atmospheric windows while using only a monochromatic readout integrated circuit. We attributed this simultaneous broadband detection to the different distributions of the total bias voltage between the mid- and long-wavelength QWIP parts.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0947-8396</s0></fA01><fA03 i2="1"><s0>Appl. phys., A Mater. sci. process. : (Print)</s0></fA03><fA05><s2>100</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Quantum well infrared photodetector simultaneously working in two atmospheric windows</s1></fA08><fA11 i1="01" i2="1"><s1>HUO (Y. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>MA (W. Q.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHANG (Y. H.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHEN (L. H.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHI (Y. L.)</s1></fA11><fA14 i1="01"><s1>Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Basic Research and Development, Kunming Institute of Physics</s1><s2>Kunming 650023</s2><s3>CHN</s3><sZ>5 aut.</sZ></fA14><fA20><s1>415-419</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16194A</s2><s5>354000194124370160</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0475338</s0></fA47><fA60><s1>P</s1><s3>CC</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics. A, Materials science & processing : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>We have demonstrated a two-contact quantum well infrared photodetector (QWIP) exhibiting simultaneous photoresponse in both the mid- and the long-wavelength atmospheric windows of 3-5 μm and of 8-12 μm. The structure of the device was achieved by sequentially growing a mid-wavelength QWIP part followed by a long-wavelength QWIP part separated by an n-doped layer. Compared with the conventional dual-band QWIP device utilizing three ohmic contacts, our QWIP is promising to greatly facilitate two-color focal plane array (FPA) fabrication by reducing the number of the indium bumps per pixel from three to one just like a monochromatic FPA fabrication and to increase the FPA fill factor by reducing one contact per pixel; another advantage may be that this QWIP FPA boasts broadband detection capability in the two atmospheric windows while using only a monochromatic readout integrated circuit. We attributed this simultaneous broadband detection to the different distributions of the total bias voltage between the mid- and long-wavelength QWIP parts.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F02</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F01</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F06A</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Détecteur IR</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Infrared detector</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Detector rayos infrarrojos</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Contact ohmique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Ohmic contact</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Contacto óhmico</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Matrice plan focal</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Focal plane arrays</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Large bande</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Wide band</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Banda ancha</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Electronique de mesure</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Readout electronics</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Circuit intégré</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Integrated circuit</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Circuito integrado</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Tension polarisation</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Bias voltage</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Voltage polarización</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Puits quantique</s0><s5>22</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Quantum well</s0><s5>22</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Pozo cuántico</s0><s5>22</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Semiconducteur type n</s0><s5>23</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>n type semiconductor</s0><s5>23</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Semiconductor tipo n</s0><s5>23</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>0757K</s0><s4>INC</s4><s5>56</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Photodétecteur</s0><s5>08</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>Photodetector</s0><s5>08</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Fotodetector</s0><s5>08</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0><s5>09</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>Optoelectronic device</s0><s5>09</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0><s5>09</s5></fC07><fN21><s1>312</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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