IndiumV3, Chine, Analysis, bibRecord, 000891

Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices

Identifieur interne : 000891 ( Chine/Analysis ); précédent : 000890; suivant : 000892

Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices

Auteurs : RBID : Pascal:11-0458171

Descripteurs français

Pascal (Inist)
- Caractéristique électrique, Empilement, Dispositif semiconducteur, Optique intégrée, Procédé de transfert, Addition étain, Contact ohmique, Résistance contact, Conductivité électrique, Cellule solaire, Evaluation performance, Electronique faible puissance, Transfert énergie, Consommation électricité, Dispositif couche mince, Matériau cristallin, Monocristal, Phosphure d'indium, Composé binaire, Oxyde d'indium, InP, ITO.

English descriptors

KwdEn :
- Binary compound, Contact resistance, Crystalline material, Electric power consumption, Electrical characteristic, Electrical conductivity, Energy transfer, Indium oxide, Indium phosphide, Integrated optics, Low-power electronics, Ohmic contact, Performance evaluation, Semiconductor device, Single crystal, Solar cell, Stacking, Thin film device, Tin addition, Transfer processing.

Abstract

We report here electrical properties of low-temperature-stacked electrodes for large-area flexible photonic devices, based on single-crystalline InP nanomembrane (NM) transfer and stacking processes. Au, Al and ITO electrodes were investigated. An excellent ohmic contact was demonstrated on the stacked InP NM-ITO electrode, with a measured contact resistivity of 0.45 Ω cm². Two types of flexible InP solar cells were also fabricated and characterized, based on the stacked InP NM-ITO and InP NM-Al contacts, respectively. The efficiency of solar cells with ITO as back contact is five times higher than that with Al as back contact. Such low-temperature energy-efficient NM transfer and electrode-stacking techniques can be applied to a wide range of flexible thin film photonic devices.

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Links to Exploration step

Pascal:11-0458171

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices</title>
<author><name>WEIQUAN YANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NanoFAB Center, Department of Electrical Engineering, University of Texas at Arlington</s1>
<s2>Arlington, TX 76019</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Arlington, TX 76019</wicri:noRegion>
</affiliation>
</author>
<author><name>RUI LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NanoFAB Center, Department of Electrical Engineering, University of Texas at Arlington</s1>
<s2>Arlington, TX 76019</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Arlington, TX 76019</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Near-field Optics and Nano Technology, School of Physics and Optoelectronic Technology, Dalian University of Technology</s1>
<s2>Dalian 116024</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Dalian 116024</wicri:noRegion>
</affiliation>
</author>
<author><name>ZHENQIANG MA</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical and Computer Engineering, University of Wisconsin-Madison</s1>
<s2>WI 53706</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Wisconsin</region>
</placeName>
</affiliation>
</author>
<author><name>WEIDONG ZHOU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NanoFAB Center, Department of Electrical Engineering, University of Texas at Arlington</s1>
<s2>Arlington, TX 76019</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Arlington, TX 76019</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0458171</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0458171 INIST</idno>
<idno type="RBID">Pascal:11-0458171</idno>
<idno type="wicri:Area/Main/Corpus">002720</idno>
<idno type="wicri:Area/Main/Repository">003043</idno>
<idno type="wicri:Area/Chine/Extraction">000891</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
<title level="j" type="main">Semiconductor science and technology</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term>
<term>Contact resistance</term>
<term>Crystalline material</term>
<term>Electric power consumption</term>
<term>Electrical characteristic</term>
<term>Electrical conductivity</term>
<term>Energy transfer</term>
<term>Indium oxide</term>
<term>Indium phosphide</term>
<term>Integrated optics</term>
<term>Low-power electronics</term>
<term>Ohmic contact</term>
<term>Performance evaluation</term>
<term>Semiconductor device</term>
<term>Single crystal</term>
<term>Solar cell</term>
<term>Stacking</term>
<term>Thin film device</term>
<term>Tin addition</term>
<term>Transfer processing</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique électrique</term>
<term>Empilement</term>
<term>Dispositif semiconducteur</term>
<term>Optique intégrée</term>
<term>Procédé de transfert</term>
<term>Addition étain</term>
<term>Contact ohmique</term>
<term>Résistance contact</term>
<term>Conductivité électrique</term>
<term>Cellule solaire</term>
<term>Evaluation performance</term>
<term>Electronique faible puissance</term>
<term>Transfert énergie</term>
<term>Consommation électricité</term>
<term>Dispositif couche mince</term>
<term>Matériau cristallin</term>
<term>Monocristal</term>
<term>Phosphure d'indium</term>
<term>Composé binaire</term>
<term>Oxyde d'indium</term>
<term>InP</term>
<term>ITO</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report here electrical properties of low-temperature-stacked electrodes for large-area flexible photonic devices, based on single-crystalline InP nanomembrane (NM) transfer and stacking processes. Au, Al and ITO electrodes were investigated. An excellent ohmic contact was demonstrated on the stacked InP NM-ITO electrode, with a measured contact resistivity of 0.45 Ω cm<sup>2</sup>
. Two types of flexible InP solar cells were also fabricated and characterized, based on the stacked InP NM-ITO and InP NM-Al contacts, respectively. The efficiency of solar cells with ITO as back contact is five times higher than that with Al as back contact. Such low-temperature energy-efficient NM transfer and electrode-stacking techniques can be applied to a wide range of flexible thin film photonic devices.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0>
</fA01>
<fA02 i1="01"><s0>SSTEET</s0>
</fA02>
<fA03 i2="1"><s0>Semicond. sci. technol.</s0>
</fA03>
<fA05><s2>26</s2>
</fA05>
<fA06><s2>9</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>WEIQUAN YANG</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>RUI LI</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>ZHENQIANG MA</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>WEIDONG ZHOU</s1>
</fA11>
<fA14 i1="01"><s1>NanoFAB Center, Department of Electrical Engineering, University of Texas at Arlington</s1>
<s2>Arlington, TX 76019</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institute of Near-field Optics and Nano Technology, School of Physics and Optoelectronic Technology, Dalian University of Technology</s1>
<s2>Dalian 116024</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Electrical and Computer Engineering, University of Wisconsin-Madison</s1>
<s2>WI 53706</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s2>095018.1-095018.5</s2>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>21041</s2>
<s5>354000509900510200</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>21 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0458171</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report here electrical properties of low-temperature-stacked electrodes for large-area flexible photonic devices, based on single-crystalline InP nanomembrane (NM) transfer and stacking processes. Au, Al and ITO electrodes were investigated. An excellent ohmic contact was demonstrated on the stacked InP NM-ITO electrode, with a measured contact resistivity of 0.45 Ω cm<sup>2</sup>
. Two types of flexible InP solar cells were also fabricated and characterized, based on the stacked InP NM-ITO and InP NM-Al contacts, respectively. The efficiency of solar cells with ITO as back contact is five times higher than that with Al as back contact. Such low-temperature energy-efficient NM transfer and electrode-stacking techniques can be applied to a wide range of flexible thin film photonic devices.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03G02C1</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F01</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D03F15</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="05" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Caractéristique électrique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Electrical characteristic</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Característica eléctrica</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Empilement</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Stacking</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Apilamiento</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Dispositif semiconducteur</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Semiconductor device</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Dispositivo semiconductor</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Optique intégrée</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Integrated optics</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Optica integrada</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Procédé de transfert</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Transfer processing</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Procesamiento de transferencia</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Addition étain</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Tin addition</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Adición estaño</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Contact ohmique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Ohmic contact</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Contacto óhmico</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Résistance contact</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Contact resistance</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Resistencia contacto</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Conductivité électrique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Electrical conductivity</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Conductividad eléctrica</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Solar cell</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Evaluation performance</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Performance evaluation</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Evaluación prestación</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Electronique faible puissance</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Low-power electronics</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Transfert énergie</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Energy transfer</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Transferencia energía</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Consommation électricité</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Electric power consumption</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Consumo electricidad</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Dispositif couche mince</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Thin film device</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Dispositivo capa delgada</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Matériau cristallin</s0>
<s5>22</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Crystalline material</s0>
<s5>22</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Material cristalino</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Monocristal</s0>
<s5>23</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Single crystal</s0>
<s5>23</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Monocristal</s0>
<s5>23</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>24</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>24</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>24</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>25</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Binary compound</s0>
<s5>25</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Compuesto binario</s0>
<s5>25</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>26</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>26</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>26</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>16</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>Optoelectronic device</s0>
<s5>16</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0>
<s5>16</s5>
</fC07>
<fN21><s1>311</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices

Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices

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Abstract

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