IndiumV3, Chine, Analysis, bibRecord, 000730

Quantum dot lasers grown by gas source molecular-beam epitaxy

Identifieur interne : 000730 ( Chine/Analysis ); précédent : 000729; suivant : 000731

Quantum dot lasers grown by gas source molecular-beam epitaxy

Auteurs : RBID : Pascal:11-0330701

Descripteurs français

Pascal (Inist)
- Laser point quantique, Méthode GSMBE, Epitaxie jet moléculaire, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Onde entretenue, Arséniure de gallium, Puissance sortie, Epaisseur couche, Couche monomoléculaire, Point quantique, Nanomatériau, Laser semiconducteur, Phosphure d'indium, InAs, Substrat indium phosphure, Substrat InP, Substrat GaAs, GaAs, 8115H, 8105E, 6855J, 8107T.

English descriptors

KwdEn :
- Continuous wave, GSMBE method, Gallium arsenides, III-V compound, III-V semiconductors, Indium arsenides, Indium phosphide, Layer thickness, Molecular beam epitaxy, Monolayers, Nanostructured materials, Output power, Quantum dot lasers, Quantum dots, Semiconductor lasers.

Abstract

We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1.10 μm and 1.54-1.70 μm wavelength region. More than 50 mW optical power was collected from one facet of the InAs/GaAs quantum dot lasers at 20 °C, while for InAs/InP quantum dot lasers the maximum output power was measured as 30 mW. For InAs/InP material system, by increasing the layer thickness of deposited InAs from 3.0 to 3.5 monolayers, the lasing wavelength can be extended from 1.5-1.6 μm to 1.6-1.7 μm. Moreover, a tunable quantum dot external cavity laser was demonstrated, utilizing the broad gain profile of InAs quantum dots.

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Pascal:11-0330701

Le document en format XML

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<author><name sortKey="Gong, Q" uniqKey="Gong Q">Q. Gong</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
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<country>République populaire de Chine</country>
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<author><name sortKey="Chen, P" uniqKey="Chen P">P. Chen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
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<author><name sortKey="Li, S G" uniqKey="Li S">S. G. Li</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
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<author><name sortKey="Lao, Y F" uniqKey="Lao Y">Y. F. Lao</name>
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<author><name sortKey="Cao, C F" uniqKey="Cao C">C. F. Cao</name>
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<author><name sortKey="Xu, C F" uniqKey="Xu C">C. F. Xu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
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<author><name sortKey="Zhang, Y G" uniqKey="Zhang Y">Y. G. Zhang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
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<author><name sortKey="Feng, S L" uniqKey="Feng S">S. L. Feng</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
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<author><name sortKey="Ma, C H" uniqKey="Ma C">C. H. Ma</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Physics and Engineering, Qufu Normal University</s1>
<s2>Qufu 273165</s2>
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<country>République populaire de Chine</country>
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</author>
<author><name sortKey="Wang, H L" uniqKey="Wang H">H. L. Wang</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Physics and Engineering, Qufu Normal University</s1>
<s2>Qufu 273165</s2>
<s3>CHN</s3>
<sZ>9 aut.</sZ>
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<country>République populaire de Chine</country>
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</titleStmt>
<publicationStmt><idno type="inist">11-0330701</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0330701 INIST</idno>
<idno type="RBID">Pascal:11-0330701</idno>
<idno type="wicri:Area/Main/Corpus">002D42</idno>
<idno type="wicri:Area/Main/Repository">002661</idno>
<idno type="wicri:Area/Chine/Extraction">000730</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Continuous wave</term>
<term>GSMBE method</term>
<term>Gallium arsenides</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Indium phosphide</term>
<term>Layer thickness</term>
<term>Molecular beam epitaxy</term>
<term>Monolayers</term>
<term>Nanostructured materials</term>
<term>Output power</term>
<term>Quantum dot lasers</term>
<term>Quantum dots</term>
<term>Semiconductor lasers</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Laser point quantique</term>
<term>Méthode GSMBE</term>
<term>Epitaxie jet moléculaire</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Onde entretenue</term>
<term>Arséniure de gallium</term>
<term>Puissance sortie</term>
<term>Epaisseur couche</term>
<term>Couche monomoléculaire</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Laser semiconducteur</term>
<term>Phosphure d'indium</term>
<term>InAs</term>
<term>Substrat indium phosphure</term>
<term>Substrat InP</term>
<term>Substrat GaAs</term>
<term>GaAs</term>
<term>8115H</term>
<term>8105E</term>
<term>6855J</term>
<term>8107T</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1.10 μm and 1.54-1.70 μm wavelength region. More than 50 mW optical power was collected from one facet of the InAs/GaAs quantum dot lasers at 20 °C, while for InAs/InP quantum dot lasers the maximum output power was measured as 30 mW. For InAs/InP material system, by increasing the layer thickness of deposited InAs from 3.0 to 3.5 monolayers, the lasing wavelength can be extended from 1.5-1.6 μm to 1.6-1.7 μm. Moreover, a tunable quantum dot external cavity laser was demonstrated, utilizing the broad gain profile of InAs quantum dots.</div>
</front>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
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<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>323</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Quantum dot lasers grown by gas source molecular-beam epitaxy</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, Germany, 22-27 August, 2010</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>GONG (Q.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CHEN (P.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LI (S. G.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>LAO (Y. F.)</s1>
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<fA11 i1="05" i2="1"><s1>CAO (C. F.)</s1>
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<fA11 i1="06" i2="1"><s1>XU (C. F.)</s1>
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<fA11 i1="07" i2="1"><s1>ZHANG (Y. G.)</s1>
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<fA11 i1="08" i2="1"><s1>FENG (S. L.)</s1>
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<fA11 i1="09" i2="1"><s1>MA (C. H.)</s1>
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<fA11 i1="10" i2="1"><s1>WANG (H. L.)</s1>
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<fA12 i1="01" i2="1"><s1>GEELHAAR (Lutz)</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>HEYN (Christian)</s1>
<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>WIECK (Andreas D.)</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<fA14 i1="02"><s1>College of Physics and Engineering, Qufu Normal University</s1>
<s2>Qufu 273165</s2>
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<sZ>10 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Paul-Drude-Institut für Festkörperelektronik</s1>
<s2>Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>University of Hambourg</s1>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>University of Bochum</s1>
<s3>DEU</s3>
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</fA15>
<fA20><s1>450-453</s1>
</fA20>
<fA21><s1>2011</s1>
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<s5>354000190370281120</s5>
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<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>19 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0330701</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1.10 μm and 1.54-1.70 μm wavelength region. More than 50 mW optical power was collected from one facet of the InAs/GaAs quantum dot lasers at 20 °C, while for InAs/InP quantum dot lasers the maximum output power was measured as 30 mW. For InAs/InP material system, by increasing the layer thickness of deposited InAs from 3.0 to 3.5 monolayers, the lasing wavelength can be extended from 1.5-1.6 μm to 1.6-1.7 μm. Moreover, a tunable quantum dot external cavity laser was demonstrated, utilizing the broad gain profile of InAs quantum dots.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A07T</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Laser point quantique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Quantum dot lasers</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Méthode GSMBE</s0>
<s5>02</s5>
</fC03>
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<s5>02</s5>
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<fC03 i1="02" i2="X" l="SPA"><s0>Método GSMBE</s0>
<s5>02</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>03</s5>
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<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>06</s5>
</fC03>
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<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Onde entretenue</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Continuous wave</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Onda continua</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Output power</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Potencia salida</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Epaisseur couche</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Layer thickness</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Espesor capa</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Couche monomoléculaire</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Monolayers</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Substrat indium phosphure</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Substrat InP</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Substrat GaAs</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8105E</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>227</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE 2010 International Conference on Molecular Beam Epitaxy</s1>
<s2>16</s2>
<s3>Berlin DEU</s3>
<s4>2010-08-22</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Quantum dot lasers grown by gas source molecular-beam epitaxy

Quantum dot lasers grown by gas source molecular-beam epitaxy

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