Characterization of nanoscale clusters fabricated by pulsed laser irradiation of thin Au films
Identifieur interne : 000315 ( Chine/Analysis ); précédent : 000314; suivant : 000316Characterization of nanoscale clusters fabricated by pulsed laser irradiation of thin Au films
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Abstract
The characterization of Au nanoclusters (AuNCs) on indium-tin-oxide (ITO) substrates fabricated by nanosecond pulsed laser irradiations of thin Au films is reported. By several hundreds of pulsed laser irradiations of 2.5 x 107 W cm-2 and 5 x 107 W cm-2 intensity in 1 min, the nanoscale clusters are formed in an ultrafast melting, collecting, growing-up and solidification process of 5, 7.5 and 10 nm Au films. The mean diameter and size distribution of nanoclusters are quantified by the statistical analysis on scanning electron microscopy (SEM) images. The melt dynamics and temperature changes of Au film under pulsed laser irradiation are obtained by quantitative evaluation. The extinction spectra of the initial Au films and formed Au nanoclusters on the ITO surface have also been measured. It has been found that the mean diameter, the surface density and extinction spectra of the induced AuNCs are influenced by the thickness of Au films and the laser intensity. The evolutional mechanism of the nanoscale clusters formation is discussed by the comparison on the morphology of the Au films with and without laser irradiations.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Characterization of nanoscale clusters fabricated by pulsed laser irradiation of thin Au films</title><author><name>YI FANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, BeijingJiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>YANBING HOU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, BeijingJiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>FENG TENG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, BeijingJiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>ZHIDONG LOU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, BeijingJiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>AIWEI TANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, BeijingJiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>BO ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, BeijingJiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>LINGCHUAN MENG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, BeijingJiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>YU NING</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, BeijingJiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>LONGFENG LU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, BeijingJiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0174657</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0174657 INIST</idno><idno type="RBID">Pascal:13-0174657</idno><idno type="wicri:Area/Main/Corpus">000E34</idno><idno type="wicri:Area/Main/Repository">001066</idno><idno type="wicri:Area/Chine/Extraction">000315</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Laser radiation</term><term>Nanostructured materials</term><term>Physical radiation effects</term><term>Pulsed lasers</term><term>Solid clusters</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Laser pulsé</term><term>Effet physique rayonnement</term><term>Rayonnement laser</term><term>Couche mince</term><term>Agrégat solide</term><term>Nanomatériau</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The characterization of Au nanoclusters (AuNCs) on indium-tin-oxide (ITO) substrates fabricated by nanosecond pulsed laser irradiations of thin Au films is reported. By several hundreds of pulsed laser irradiations of 2.5 x 10<sup>7</sup> W cm<sup>-2</sup> and 5 x 10<sup>7</sup> W cm<sup>-2</sup> intensity in 1 min, the nanoscale clusters are formed in an ultrafast melting, collecting, growing-up and solidification process of 5, 7.5 and 10 nm Au films. The mean diameter and size distribution of nanoclusters are quantified by the statistical analysis on scanning electron microscopy (SEM) images. The melt dynamics and temperature changes of Au film under pulsed laser irradiation are obtained by quantitative evaluation. The extinction spectra of the initial Au films and formed Au nanoclusters on the ITO surface have also been measured. It has been found that the mean diameter, the surface density and extinction spectra of the induced AuNCs are influenced by the thickness of Au films and the laser intensity. The evolutional mechanism of the nanoscale clusters formation is discussed by the comparison on the morphology of the Au films with and without laser irradiations.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>273</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Characterization of nanoscale clusters fabricated by pulsed laser irradiation of thin Au films</s1></fA08><fA11 i1="01" i2="1"><s1>YI FANG</s1></fA11><fA11 i1="02" i2="1"><s1>YANBING HOU</s1></fA11><fA11 i1="03" i2="1"><s1>FENG TENG</s1></fA11><fA11 i1="04" i2="1"><s1>ZHIDONG LOU</s1></fA11><fA11 i1="05" i2="1"><s1>AIWEI TANG</s1></fA11><fA11 i1="06" i2="1"><s1>BO ZHANG</s1></fA11><fA11 i1="07" i2="1"><s1>LINGCHUAN MENG</s1></fA11><fA11 i1="08" i2="1"><s1>YU NING</s1></fA11><fA11 i1="09" i2="1"><s1>LONGFENG LU</s1></fA11><fA14 i1="01"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, BeijingJiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>625-631</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000504110090920</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>29 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0174657</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The characterization of Au nanoclusters (AuNCs) on indium-tin-oxide (ITO) substrates fabricated by nanosecond pulsed laser irradiations of thin Au films is reported. By several hundreds of pulsed laser irradiations of 2.5 x 10<sup>7</sup> W cm<sup>-2</sup> and 5 x 10<sup>7</sup> W cm<sup>-2</sup> intensity in 1 min, the nanoscale clusters are formed in an ultrafast melting, collecting, growing-up and solidification process of 5, 7.5 and 10 nm Au films. The mean diameter and size distribution of nanoclusters are quantified by the statistical analysis on scanning electron microscopy (SEM) images. The melt dynamics and temperature changes of Au film under pulsed laser irradiation are obtained by quantitative evaluation. The extinction spectra of the initial Au films and formed Au nanoclusters on the ITO surface have also been measured. It has been found that the mean diameter, the surface density and extinction spectra of the induced AuNCs are influenced by the thickness of Au films and the laser intensity. The evolutional mechanism of the nanoscale clusters formation is discussed by the comparison on the morphology of the Au films with and without laser irradiations.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Laser pulsé</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Pulsed lasers</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Effet physique rayonnement</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Physical radiation effects</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Rayonnement laser</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Laser radiation</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Agrégat solide</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Solid clusters</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>06</s5></fC03><fN21><s1>154</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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