InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
Identifieur interne : 000213 ( Chine/Analysis ); précédent : 000212; suivant : 000214InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
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Abstract
A new InP/InGaAs/InP DHBT structure with high carbon (C)-doped base was optimized and grown successfully by gas source molecular beam epitaxy (GSMBE) in this work. The C-doping concentration is 3 × 1019 cm-3 with carrier mobility of 66.3 cm2/V s. Characteristics of C-doped InGaAs materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100 × 100 μm2 was fabricated. The open base breakdown voltage (VBCEO) of 4.2 V and current gain of 60 at VCE of 3.0 V were achieved. All these results prove the material is suitable for DHBT device fabrication.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy</title><author><name>TENG TENG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences</s1><s2>Shanghai 200050</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200050</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1><s2>Beijing 100049</s2><s3>CHN</s3><sZ>1 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>ANHUAI XU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences</s1><s2>Shanghai 200050</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200050</wicri:noRegion></affiliation></author><author><name>LIKUN AI</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratory of Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences</s1><s2>Shanghai 200050</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200050</wicri:noRegion></affiliation></author><author><name>HAO SUN</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratory of Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences</s1><s2>Shanghai 200050</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200050</wicri:noRegion></affiliation></author><author><name>MING QI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences</s1><s2>Shanghai 200050</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200050</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0288310</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0288310 INIST</idno><idno type="RBID">Pascal:13-0288310</idno><idno type="wicri:Area/Main/Corpus">000814</idno><idno type="wicri:Area/Main/Repository">000A86</idno><idno type="wicri:Area/Chine/Extraction">000213</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Breakdown voltage</term><term>Carbon additions</term><term>Carrier mobility</term><term>Doped materials</term><term>Double heterojunction</term><term>GSMBE method</term><term>Gallium arsenides</term><term>Heterojunction bipolar transistors</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Indium phosphide</term><term>Molecular beam epitaxy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Addition carbone</term><term>Méthode GSMBE</term><term>Epitaxie jet moléculaire</term><term>Mobilité porteur charge</term><term>Matériau dopé</term><term>Tension amorçage</term><term>Hétérojonction double</term><term>Transistor bipolaire hétérojonction</term><term>Phosphure d'indium</term><term>Arséniure d'indium</term><term>Arséniure de gallium</term><term>InP</term><term>InGaAs</term><term>8115H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A new InP/InGaAs/InP DHBT structure with high carbon (C)-doped base was optimized and grown successfully by gas source molecular beam epitaxy (GSMBE) in this work. The C-doping concentration is 3 × 10<sup>19</sup> cm<sup>-3</sup> with carrier mobility of 66.3 cm<sup>2</sup>/V s. Characteristics of C-doped InGaAs materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100 × 100 μm<sup>2</sup> was fabricated. The open base breakdown voltage (VB<sub>CEO</sub>) of 4.2 V and current gain of 60 at V<sub>CE</sub> of 3.0 V were achieved. All these results prove the material is suitable for DHBT device fabrication.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>378</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>The 17th International Conference on Molecular Beam Epitaxy</s1></fA09><fA11 i1="01" i2="1"><s1>TENG TENG</s1></fA11><fA11 i1="02" i2="1"><s1>ANHUAI XU</s1></fA11><fA11 i1="03" i2="1"><s1>LIKUN AI</s1></fA11><fA11 i1="04" i2="1"><s1>HAO SUN</s1></fA11><fA11 i1="05" i2="1"><s1>MING QI</s1></fA11><fA12 i1="01" i2="1"><s1>AKIMOTO (Katzuhiro)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SUEMASU (Takashi)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>OKUMURA (Hajime)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences</s1><s2>Shanghai 200050</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1><s2>Beijing 100049</s2><s3>CHN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Laboratory of Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences</s1><s2>Shanghai 200050</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>University of Tsukuba</s1><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA20><s1>618-621</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000506550351510</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0288310</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>A new InP/InGaAs/InP DHBT structure with high carbon (C)-doped base was optimized and grown successfully by gas source molecular beam epitaxy (GSMBE) in this work. The C-doping concentration is 3 × 10<sup>19</sup> cm<sup>-3</sup> with carrier mobility of 66.3 cm<sup>2</sup>/V s. Characteristics of C-doped InGaAs materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100 × 100 μm<sup>2</sup> was fabricated. The open base breakdown voltage (VB<sub>CEO</sub>) of 4.2 V and current gain of 60 at V<sub>CE</sub> of 3.0 V were achieved. All these results prove the material is suitable for DHBT device fabrication.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Addition carbone</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Carbon additions</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Méthode GSMBE</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>GSMBE method</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Método GSMBE</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Mobilité porteur charge</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Carrier mobility</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Doped materials</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Tension amorçage</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Breakdown voltage</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Voltaje perforación</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Hétérojonction double</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Double heterojunction</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Heterounión doble</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Transistor bipolaire hétérojonction</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Heterojunction bipolar transistors</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>15</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>15</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>15</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>InGaAs</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>8115H</s0><s4>INC</s4><s5>71</s5></fC03><fN21><s1>273</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE2012 International Conference on Molecular Beam Epitaxy</s1><s2>17</s2><s3>Nara JPN</s3><s4>2012-09-23</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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