Platinum nanoparticles modified indium tin oxide anodes for enhancing the efficiency and stability of organic solar cells
Identifieur interne : 000144 ( Chine/Analysis ); précédent : 000143; suivant : 000145Platinum nanoparticles modified indium tin oxide anodes for enhancing the efficiency and stability of organic solar cells
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Abstract
Organic P3HT:PCBM heterojunction solar cells with indium tin oxide (ITO) anodes modified by platinum nanoparticles (NPs) were fabricated. The open-circuit voltage (Voc) of the cells was increased compared with the reference cell without Pt NPs. An enhanced power conversion efficiency of ∼12% was obtained for the optimum sputtering deposition duration of 10 s. A double junction model of the Schottky junction and the p-n junction is proposed to describe the frequency dependence of the capacitance in the modified cell. The formation of the front Schottky junction allows efficient collection of holes from the active layer, and enhances the Voc. Moreover, the air stability of organic solar cells was improved. The modification of ITO with Pt NPs shows promise as a technique for fabrication of high-efficiency stable photovoltaic devices.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Platinum nanoparticles modified indium tin oxide anodes for enhancing the efficiency and stability of organic solar cells</title><author><name>LIRU LI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Physics of Microsystem and Department of Physics, Henan University</s1><s2>Kaifeng, Henan 475004</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Kaifeng, Henan 475004</wicri:noRegion></affiliation></author><author><name>YANG ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Physics of Microsystem and Department of Physics, Henan University</s1><s2>Kaifeng, Henan 475004</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Kaifeng, Henan 475004</wicri:noRegion></affiliation></author><author><name>SHENGJUN LI</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronics, Henan University</s1><s2>Kaifeng, Henan 475004</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Kaifeng, Henan 475004</wicri:noRegion></affiliation></author><author><name>GUOQIANG LI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Physics of Microsystem and Department of Physics, Henan University</s1><s2>Kaifeng, Henan 475004</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Kaifeng, Henan 475004</wicri:noRegion></affiliation></author><author><name>WEIFENG ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronics, Henan University</s1><s2>Kaifeng, Henan 475004</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Kaifeng, Henan 475004</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0064499</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0064499 INIST</idno><idno type="RBID">Pascal:13-0064499</idno><idno type="wicri:Area/Main/Corpus">001309</idno><idno type="wicri:Area/Main/Repository">000699</idno><idno type="wicri:Area/Chine/Extraction">000144</idno></publicationStmt><seriesStmt><idno type="ISSN">0013-4686</idno><title level="j" type="abbreviated">Electrochim. acta</title><title level="j" type="main">Electrochimica acta</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anode</term><term>Efficiency</term><term>Electrode material</term><term>Hole</term><term>Indium Oxides</term><term>Nanoparticle</term><term>Organic solar cells</term><term>Platinum</term><term>Stability</term><term>Tin Oxides</term><term>Voltage capacity curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Platine</term><term>Nanoparticule</term><term>Etain Oxyde</term><term>Indium Oxyde</term><term>Anode</term><term>Efficacité</term><term>Stabilité</term><term>Cellule solaire organique</term><term>Trou</term><term>Caractéristique capacité tension</term><term>Matériau électrode</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Platine</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Organic P3HT:PCBM heterojunction solar cells with indium tin oxide (ITO) anodes modified by platinum nanoparticles (NPs) were fabricated. The open-circuit voltage (V<sub>oc</sub>) of the cells was increased compared with the reference cell without Pt NPs. An enhanced power conversion efficiency of ∼12% was obtained for the optimum sputtering deposition duration of 10 s. A double junction model of the Schottky junction and the p-n junction is proposed to describe the frequency dependence of the capacitance in the modified cell. The formation of the front Schottky junction allows efficient collection of holes from the active layer, and enhances the V<sub>oc</sub>. Moreover, the air stability of organic solar cells was improved. The modification of ITO with Pt NPs shows promise as a technique for fabrication of high-efficiency stable photovoltaic devices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0013-4686</s0></fA01><fA02 i1="01"><s0>ELCAAV</s0></fA02><fA03 i2="1"><s0>Electrochim. acta</s0></fA03><fA05><s2>87</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Platinum nanoparticles modified indium tin oxide anodes for enhancing the efficiency and stability of organic solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>LIRU LI</s1></fA11><fA11 i1="02" i2="1"><s1>YANG ZHANG</s1></fA11><fA11 i1="03" i2="1"><s1>SHENGJUN LI</s1></fA11><fA11 i1="04" i2="1"><s1>GUOQIANG LI</s1></fA11><fA11 i1="05" i2="1"><s1>WEIFENG ZHANG</s1></fA11><fA14 i1="01"><s1>Institute for Physics of Microsystem and Department of Physics, Henan University</s1><s2>Kaifeng, Henan 475004</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronics, Henan University</s1><s2>Kaifeng, Henan 475004</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>277-282</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>1516</s2><s5>354000508213550360</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. 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