IndiumV3, Chine, Analysis, bibRecord, 000078

The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm

Identifieur interne : 000078 ( Chine/Analysis ); précédent : 000077; suivant : 000079

The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm

Auteurs : RBID : Pascal:13-0288355

Descripteurs français

Pascal (Inist)
- Dopage, Semiconducteur III-V, Composé III-V, Laser cascade quantique, Laser semiconducteur, Méthode GSMBE, Epitaxie jet moléculaire, Courant seuil, Densité courant, Guide onde, Transfert chaleur, Phonon, Phosphure d'indium, Arséniure d'indium, Arséniure de gallium, InP, InAlAs, InGaAs, 8115H.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Current density, Doping, GSMBE method, Gallium arsenides, Heat transfer, III-V compound, III-V semiconductors, Indium arsenides, Indium phosphide, Molecular beam epitaxy, Phonons, Quantum cascade laser, Semiconductor lasers, Threshold current, Waveguides.

Abstract

Effects of the injector doping densities on lasing properties of mid-infrared InAlAs-InGaAs-InP quantum cascade lasers at 4.3 μm have been studied. Lasers with different average injector doping between 1.29E17 cm^-3 and 2.07E17 cm^-3 have been grown by gas source molecular beam epitaxy (GSMBE), and their lasing characteristics were investigated. Lasers with low doped injectors (1.68E17 cm^-3) exhibited lower threshold current density, longer emission wavelength and lower characteristic temperature T₀. The lower injector doping density decreases waveguide loss. On the other hand, the high doping of the injector increases heat transfer through phonon in QCL active region, and thus results in high characteristic temperature T₀.

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Le document en format XML

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<author><name sortKey="Li, Y Y" uniqKey="Li Y">Y. Y. Li</name>
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<term>Doping</term>
<term>GSMBE method</term>
<term>Gallium arsenides</term>
<term>Heat transfer</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Indium phosphide</term>
<term>Molecular beam epitaxy</term>
<term>Phonons</term>
<term>Quantum cascade laser</term>
<term>Semiconductor lasers</term>
<term>Threshold current</term>
<term>Waveguides</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Dopage</term>
<term>Semiconducteur III-V</term>
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<term>Courant seuil</term>
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<term>Transfert chaleur</term>
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<term>Phosphure d'indium</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>InP</term>
<term>InAlAs</term>
<term>InGaAs</term>
<term>8115H</term>
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<front><div type="abstract" xml:lang="en">Effects of the injector doping densities on lasing properties of mid-infrared InAlAs-InGaAs-InP quantum cascade lasers at 4.3 μm have been studied. Lasers with different average injector doping between 1.29E17 cm<sup>-3</sup>
 and 2.07E17 cm<sup>-3</sup>
 have been grown by gas source molecular beam epitaxy (GSMBE), and their lasing characteristics were investigated. Lasers with low doped injectors (1.68E17 cm<sup>-3</sup>
) exhibited lower threshold current density, longer emission wavelength and lower characteristic temperature T<sub>0</sub>
. The lower injector doping density decreases waveguide loss. On the other hand, the high doping of the injector increases heat transfer through phonon in QCL active region, and thus results in high characteristic temperature T<sub>0</sub>
.</div>
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 have been grown by gas source molecular beam epitaxy (GSMBE), and their lasing characteristics were investigated. Lasers with low doped injectors (1.68E17 cm<sup>-3</sup>
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The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm

The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm

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Abstract

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