Transparent amorphous Indium-Gallium-Zinc-Oxygen thin film transistors using solution technology at low temperature
Identifieur interne : 000065 ( Chine/Analysis ); précédent : 000064; suivant : 000066Transparent amorphous Indium-Gallium-Zinc-Oxygen thin film transistors using solution technology at low temperature
Auteurs : RBID : Pascal:13-0278287Descripteurs français
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- concept : Zinc, Oxygène, Technologie.
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Abstract
Transparent amorphous Indium-Gallium-Zinc-oxide thin films transistors (a-IGZO TFTs) were fabricated using spin-coating technique at a relative low annealing temperature of 300 °C. The effects of the gallium (Ga) concentration on the properties of the IGZO solutions, the optical properties of the a-IGZO films,and the a-IGZO TFTs device properties were researched. The a-IGZO thin films were uniform and smooth, root mean square roughness of IGZO films was less than 0.4 nm, and the transmittance was more than 80 % in the visible wavelength. The results showed that An appropriate amount of Ga doping and annealing temperature could significant improve the a-IGZO TFTs' device performance. A saturation mobility of 0.04 cm2 V-1 s-1 was obtained when the Ga concentration reached 10.7 %.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Transparent amorphous Indium-Gallium-Zinc-Oxygen thin film transistors using solution technology at low temperature</title><author><name>XIFENG LI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University</s1><s2>Shanghai 200072</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200072</wicri:noRegion></affiliation></author><author><name>QIAN LI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University</s1><s2>Shanghai 200072</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200072</wicri:noRegion></affiliation></author><author><name>JIANHUA ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University</s1><s2>Shanghai 200072</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200072</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0278287</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0278287 INIST</idno><idno type="RBID">Pascal:13-0278287</idno><idno type="wicri:Area/Main/Corpus">000904</idno><idno type="wicri:Area/Main/Repository">000297</idno><idno type="wicri:Area/Chine/Extraction">000065</idno></publicationStmt><seriesStmt><idno type="ISSN">0928-0707</idno><title level="j" type="abbreviated">J. sol-gel sci. technol.</title><title level="j" type="main">Journal of sol-gel science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium</term><term>Indium</term><term>Low temperature</term><term>Oxygen</term><term>Sol gel process</term><term>Technology</term><term>Thin film</term><term>Zinc</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Indium</term><term>Gallium</term><term>Zinc</term><term>Oxygène</term><term>Couche mince</term><term>Technologie</term><term>Basse température</term><term>Procédé sol gel</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term><term>Oxygène</term><term>Technologie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Transparent amorphous Indium-Gallium-Zinc-oxide thin films transistors (a-IGZO TFTs) were fabricated using spin-coating technique at a relative low annealing temperature of 300 °C. The effects of the gallium (Ga) concentration on the properties of the IGZO solutions, the optical properties of the a-IGZO films,and the a-IGZO TFTs device properties were researched. The a-IGZO thin films were uniform and smooth, root mean square roughness of IGZO films was less than 0.4 nm, and the transmittance was more than 80 % in the visible wavelength. The results showed that An appropriate amount of Ga doping and annealing temperature could significant improve the a-IGZO TFTs' device performance. A saturation mobility of 0.04 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> was obtained when the Ga concentration reached 10.7 %.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0928-0707</s0></fA01><fA03 i2="1"><s0>J. sol-gel sci. technol.</s0></fA03><fA05><s2>66</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Transparent amorphous Indium-Gallium-Zinc-Oxygen thin film transistors using solution technology at low temperature</s1></fA08><fA11 i1="01" i2="1"><s1>XIFENG LI</s1></fA11><fA11 i1="02" i2="1"><s1>QIAN LI</s1></fA11><fA11 i1="03" i2="1"><s1>JIANHUA ZHANG</s1></fA11><fA14 i1="01"><s1>Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University</s1><s2>Shanghai 200072</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>497-503</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26574</s2><s5>354000503095670190</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. 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