Eléments de l'association
| ![]() |
List of bibliographic references
Number of relevant bibliographic references: 3.Ident. | Authors (with country if any) | Title |
---|---|---|
000808 | Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD | |
000C01 | Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method | |
000F05 | Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique |
![]() | This area was generated with Dilib version V0.5.77. | ![]() |