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Analysis
Chine
Racine
Analysis
Chine
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Racine

Serveur d'exploration sur l'Indium

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Eléments de l'association

ZHIMING LI9
Buffer layer117
ZHIMING LI Sauf Buffer layer" 3
Buffer layer Sauf ZHIMING LI" 111
ZHIMING LI Et Buffer layer 6
ZHIMING LI Ou Buffer layer 120
Corpus4194
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List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000808 Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000907 Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
000C01 Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method
000F05 Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
001186 Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
001187 Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD
Wicri

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