Ident. | Authors (with country if any) | Title |
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001952 |
| Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition |
001B43 |
| Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method |
001D18 |
| The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method |
001D37 |
| Statistical investigation on morphology development of gallium nitride in initial growth stage |
001E10 |
| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition |
001F32 |
| Indium doping effect on GaN in the initial growth stage |