Ident. | Authors (with country if any) | Title |
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001832 |
| Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) |
001849 |
| Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions |
001B29 |
| The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing |
001F06 |
| Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer |
001F31 |
| Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy |
002070 |
| Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy |
002137 |
| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
002646 |
| Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure |