| Ident. | Authors (with country if any) | Title |
|---|
| 001579 |
| Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001711 |
| The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots |
| 001832 |
| Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) |
| 001849 |
| Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001973 |
| Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer |
| 001B29 |
| The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing |
| 001B45 |
| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
| 001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
| 001C24 |
| Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate |
| 001C33 |
| Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser |
| 001C46 |
| Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer |
| 001D34 |
| Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer |
| 001D61 |
| Influence of strain on annealing effects of In(Ga)As quantum dots |
| 001D62 |
| Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots |
| 001D85 |
| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots |
| 001D87 |
| Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 001E05 |
| A novel line-order of InAs quantum dots on GaAs |
| 001E38 |
| Thermal redistribution of photocarriers between bimodal quantum dots |
| 001F06 |
| Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer |
| 001F21 |
| Optical properties of InGaAs quantum dots formed on InAlAs wetting layer |
| 001F31 |
| Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy |
| 002048 |
| Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate |
| 002058 |
| Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002063 |
| Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates |
| 002064 |
| Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots |
| 002067 |
| Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy |
| 002068 |
| Self-assembled InAs quantum wires on InP(001) |
| 002070 |
| Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy |
| 002075 |
| Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size |
| 002116 |
| Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002137 |
| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
| 002160 |
| Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing |
| 002228 |
| Substrate surface atomic structure influence on the growth of InAlAs quantum dots |
| 002253 |
| Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots |
| 002267 |
| InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1) |
| 002274 |
| Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy |
| 002341 |
| Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure |
| 002374 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311)GaAs matrix |
| 002426 |
| Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy |
| 002441 |
| Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer |
| 002446 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix |
| 002646 |
| Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure |
