| Ident. | Authors (with country if any) | Title |
|---|
| 001579 |
| Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001711 |
| The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots |
| 001832 |
| Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001973 |
| Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer |
| 001B45 |
| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
| 001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
| 001C33 |
| Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser |
| 001D61 |
| Influence of strain on annealing effects of In(Ga)As quantum dots |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 001F06 |
| Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer |
| 001F31 |
| Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy |
| 002048 |
| Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate |
| 002058 |
| Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots |
| 002067 |
| Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy |
| 002068 |
| Self-assembled InAs quantum wires on InP(001) |
| 002070 |
| Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002228 |
| Substrate surface atomic structure influence on the growth of InAlAs quantum dots |
| 002267 |
| InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1) |
| 002274 |
| Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy |
| 002426 |
| Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy |
