| Ident. | Authors (with country if any) | Title |
|---|
| 000D81 |
| Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures |
| 001B30 |
| The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors |
| 001F25 |
| Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy |
| 001F27 |
| MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes |
| 002501 |
| MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures |
