Ident. | Authors (with country if any) | Title |
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001911 |
| Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors |
001A63 |
| Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes |
001B18 |
| Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures |
001C83 |
| Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors |
001E41 |
| Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications |
001E74 |
| Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor |
001F94 |
| Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors |
002031 |
| Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor |
002150 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
002151 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
002177 |
| Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors |
002181 |
| Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor |
002182 |
| Superlatticed negative differential-resistance heterojunction bipolar transistor |
002192 |
| Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors |
002193 |
| Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors |
002305 |
| Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors |