| Ident. | Authors (with country if any) | Title |
|---|
| 001911 |
| Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors |
| 001A39 |
| Characteristics of an InP-InGaAs-InGaAsP HBT |
| 001E74 |
| Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor |
| 001F13 |
| Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor |
| 002031 |
| Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor |
| 002150 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002151 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002177 |
| Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors |
| 002181 |
| Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor |
| 002182 |
| Superlatticed negative differential-resistance heterojunction bipolar transistor |
| 002305 |
| Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors |
