| Ident. | Authors (with country if any) | Title |
|---|
| 001747 |
| Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy |
| 001776 |
| Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells |
| 001A55 |
| Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices |
| 001F10 |
| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy |
| 001F20 |
| Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures |
| 001F85 |
| Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells |
| 002007 |
| Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy |
