| Ident. | Authors (with country if any) | Title |
|---|
| 001210 |
| Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz |
| 001B30 |
| The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors |
| 001B95 |
| High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy |
| 002707 |
| Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm |
