| Ident. | Authors (with country if any) | Title |
|---|
| 001943 |
| Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers |
| 001974 |
| Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm |
| 001988 |
| MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells |
| 001A14 |
| Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers |
| 001B92 |
| Improved performance of 1.3 μm InGaAsP-InP lasers with an AlInAs electron stopper layer |
