| Ident. | Authors (with country if any) | Title |
|---|
| 001595 |
| Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy |
| 001609 |
| InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001831 |
| Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy |
| 001922 |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 001976 |
| Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001B47 |
| Strain relaxation of InAs epilayer on GaAs under In-rich conditions |
| 001B53 |
| Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates |
| 002047 |
| Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer |
| 002245 |
| RHEED characterization of InAs/GaAs grown by MBE |
