| Ident. | Authors (with country if any) | Title |
|---|
| 002031 |
| Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor |
| 002150 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002151 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002177 |
| Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors |
| 002181 |
| Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor |
| 002192 |
| Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors |
| 002193 |
| Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors |
| 002305 |
| Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors |
