Ident. | Authors (with country if any) | Title |
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001E14 |
| Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells |
001E78 |
| Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy |
002170 |
| Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy |
002334 |
| Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy |
002462 |
| Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes |