| Ident. | Authors (with country if any) | Title |
|---|
| 000823 |
| Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers |
| 001262 |
| The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED |
| 001947 |
| Study of photoluminescence and absorption in phase-separation InGaN films |
| 001A45 |
| An approach to determine the chemical composition in InGaN/GaN multiple quantum wells |
| 002114 |
| Elastic strain in InGaN and AlGaN layers |
