| Ident. | Authors (with country if any) | Title |
|---|
| 000600 |
| Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) |
| 000C23 |
| Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer |
| 000C82 |
| The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers |
| 001065 |
| Photoelectric characteristics of metal/InGaN/GaN heterojunction structure |
| 001216 |
| Cathodoluminescence study of GaN-based film structures |
