| Ident. | Authors (with country if any) | Title |
|---|
| 001876 |
| Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes |
| 001A64 |
| Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 83, 3626 (2003)] |
| 001C57 |
| Localized and quantum-well state excitons in AlInGaN laser-diode structure |
| 001D00 |
| Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing |
| 001E46 |
| Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes |
| 001E72 |
| Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells |
| 001F91 |
| Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells |
| 002040 |
| Stimulated emission study of InGaN/GaN multiple quantum well structures |
