| Ident. | Authors (with country if any) | Title |
|---|
| 001E55 |
| Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector |
| 001E60 |
| Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots |
| 001E65 |
| Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry-Perot lasers |
| 001F88 |
| Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots |
| 001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| 002000 |
| Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots |
| 002001 |
| Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots |
| 002037 |
| Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| 002206 |
| Room-temperature operation of In0.5Ga0.5As as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy |
| 002209 |
| Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates |
| 002210 |
| Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots |
