Ident. | Authors (with country if any) | Title |
---|
000009 |
| Substitutional carbon doping of hexagonal multi-walled boron nitride nanotubes (h-MWBNNTs) via ion implantation |
000020 |
| Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy |
000036 |
| Effect of Al content on the performance of Cu(In,Al)Se2 powders prepared by mechanochemical process |
000039 |
| Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature |
000041 |
| Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature |
000069 |
| Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition |
000071 |
| Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor |
000088 |
| Synthesis and third-order optical nonlinearities of In2S3 quantum dots glass |
000101 |
| Study of Ultraviolet Emission Enhancement in AlxInyGa1-x-yN Quaternary Alloy Film |
000102 |
| Structure and optoelectronic properties of Mg-doped CuFeO2 thin films prepared by sol-gel method |
000129 |
| Pressure-induced structural and vibrational evolution in ferroelectric RInO3 (R=Eu, Gd, Dy) |
000161 |
| Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition |
000181 |
| Martensitic transformation in Heusler alloy Mn2PtIn: Theoretical and experimental investigation |
000185 |
| Low-temperature growth of InxGa1-xN films by radio-frequency magnetron sputtering |
000193 |
| Investigation of copper indium gallium selenide material growth by selenization of metallic precursors |
000208 |
| Influence of In doping on the structure, stability and electrical conduction behavior of Ba(Ce,Ti)O3 solid solution |
000214 |
| InP nanowires synthesized via solvothermal process with CTAB assisted |
000217 |
| InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy |
000218 |
| In(OH)3 and In2O3 nanorice and microflowers: morphology transformation and optical properties |
000256 |
| Facile preparation of continuous indium metal-organic framework thin films on indium tin oxide glass |
000274 |
| Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors |
000276 |
| Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering |
000288 |
| Effect of La3+ substitution on the phase transitions, microstructure and electrical properties of Bi1-xLaxFeO3 ceramics |
000299 |
| Crystal structures of two novel borate compounds MgInBO4 and MgIn7/8B7/8O29/8 |
000303 |
| Controllable preparation of WO3 nanorod arrays by hydrothermal method |
000311 |
| Colloidal CZTS nanoparticles and films: Preparation and characterization |
000317 |
| Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors |
000321 |
| Atomistic structures and phase transition of In2Se3 nanowires studied by DFT calculations and synchrotron radiation X-ray diffraction |
000325 |
| An optimized In-CuGa metallic precursors for chalcopyrite thin films |
000331 |
| A series of novel gallium and indium borates constructed from [B5O8(OH)2]3- clusters and metal complex linkers |
000351 |
| Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows |
000363 |
| Three-Dimensional Pillared-Layer 3d-4f Heterometallic Coordination Polymers With or Without Halides |
000387 |
| Synthesis of CuInSe2 thin film by a hydroxides-based deposition process |
000388 |
| Synthesis of CuInSe2 monodisperse nanoparticles and the nanorings shape evolution via a green solution reaction route |
000395 |
| Syntheses, structure and properties of three-dimensional pillared-layer Ag(I)-Ln(III) heterometallic coordination polymers based on mixed isonicotinate and hemimellitate ligands |
000397 |
| Subsolidus phase relations in CaO-In2O3-B2O3 system and crystal structure of CaInBO4 |
000400 |
| Study of sulphidation of Cu-In nanoparticle precursor films with an air-stable process |
000401 |
| Structure of AgI-doped Ge-In-S glasses: Experiment, reverse Monte Carlo modelling, and density functional calculations |
000405 |
| Structural and optical studies of ZnS nanocrystal films prepared by sulfosalicylic acid (C7H6O6S)-assisted galvanostatic deposition with subsequent annealing |
000416 |
| Sensitive and selective imprinted electrochemical sensor for p-nitrophenol based on ZnO nanoparticles/carbon nanotubes doped chitosan film |
000437 |
| Preparation of Er3+/Yb3+ co-doped Ga/In based fluorophosphates glass-ceramics by thermoelectric treatments |
000438 |
| Prediction of the Cu-Ga-In Ternary Phase Diagram |
000450 |
| Particle Size and Structural Control of ZnWO4 Nanocrystals via Sn2+ Doping for Tunable Optical and Visible Photocatalytic Properties |
000456 |
| One-step synthesis of Cu(In,Ga)Se2 absorber layers by magnetron sputtering from a single quaternary target |
000460 |
| New strategy to the controllable synthesis of CuInS2 hollow nanospheres and their applications in lithium ion batteries |
000465 |
| Microstructural characterization of Cu-poor Cu (In, Ga)Se2 surface layer |
000483 |
| Investigation on growth of In2S3 thin films by chemical bath deposition |
000489 |
| Influence of substrates on the structural and optical properties of ammonia-free chemically deposited CdS films |
000503 |
| Hydrothermal synthesis of Cu2S nanocrystalline thin film on indium tin oxide substrate: Morphology, optical and electrical properties |
000518 |
| Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth |
000576 |
| Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition |
000581 |
| Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition |
000597 |
| Crystal structure and bonding characteristics of In-doped β-Zn4Sb3 |
000598 |
| Controlled synthesis of luminescent CuInS2 nanocrystals and their optical properties |
000607 |
| Characterization of Cu(In,Ga)Se2 films deposited by single-step electron beam evaporation for solar cell applications |
000610 |
| Cadmium sulfide nanotubes thin films: Characterization and photoelectrochemical behavior |
000611 |
| Bridgman growth, crystallographic characterization and electrical properties of relaxor-based ferroelectric single crystal PIMNT |
000612 |
| Biomolecule-assisted synthesis and gas-sensing properties of porous nanosheet-based corundum In2O3 microflowers |
000647 |
| XRD simulation study of doped LiFeP04 |
000652 |
| Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films |
000672 |
| The influence of annealing temperature on the structural, electrical and optical properties of ion beam sputtered CuInSe2 thin films |
000683 |
| Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction |
000688 |
| Synthesis, formation mechanism and electric property of hollow InP nanospheres |
000692 |
| Synthesis of large single-grain 1/1 approximant crystals in the Ag-In-Eu system by the self-flux method |
000698 |
| Synthesis and characterization of Er3+ doped CaF2 nanoparticles |
000706 |
| Structural characterization of CuInS2 thin films from Cu-In metal inks |
000710 |
| Strain accumulation in InAs/InxGai1-xAs quantum dots |
000711 |
| Strain accumulation in InAs/InxGa1-xAs quantum dots |
000726 |
| Red electroluminescence of diamond thin films |
000729 |
| Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy |
000738 |
| Preparation of CuIn1-xGaxS2 (x=0.5) flowers consisting of nanoflakes via a solvothermal method |
000746 |
| Pluronic P123 assisted synthesis of hollow InSn/In2O3 hybrid nanoparticles by solution dispersion |
000747 |
| Photovoltaic properties of the copper-phthalocyanine and ZnO nanorod array system affected by ethanol |
000771 |
| One-step synthesis and stabilization of gold nanoparticles and multilayer film assembly |
000785 |
| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers |
000800 |
| Investigation on Indium-Filled Skutterudite Materials Prepared by Combining Hydrothermal Synthesis and Hot Pressing |
000805 |
| Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD |
000806 |
| Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD |
000808 |
| Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD |
000823 |
| Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers |
000829 |
| Highly Transparent and Conductive Zn0.86Cd0.11In0.03O Thin Film Prepared by Pulsed Laser Deposition |
000833 |
| High-Temperature Thermoelectric Properties of Co4Sb12-Based Skutterudites with Multiple Filler Atoms: Ce0.1InxYbyCo4Sb12 |
000843 |
| Growth mechanism of vertical compositional inhomogeneities in AlInN films |
000844 |
| Growth and optical properties of tetrapod-like indium-doped ZnO nanorods with a layer-structured surface |
000846 |
| Growth and characterization of AgGa1-xInxSe2 crystals with high indium contents |
000851 |
| Formation of CuInSe2 from Cu2Se and In2Se3 compounds |
000879 |
| Electrodeposition and characterization of CaF2 and rare earth doped CaF2 films |
000901 |
| Effects of Cu/In ratio of electrodeposited precursor on post-sulfurization process in fabricating quaternary CuIn(S,Se)2 thin films |
000902 |
| Effects of Annealing on Structural and Electrical Properties of CulnSe2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes |
000907 |
| Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method |
000911 |
| Effect of Ce-Doping on Thermoelectric Properties in PbTe Alloys Prepared by Spark Plasma Sintering |
000913 |
| Ease of control and switching between ordered free-standing arrays of ZnO nanotubes and nanorods on conductive transparent substrates |
000924 |
| Cu-In-O composite thin films deposited by reactive DC magnetron sputtering |
000930 |
| Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition |
000933 |
| Control of ferromagnetism in Fe-doped In2O3 by carbothermal annealing |
000965 |
| A novel aqueous co-precipitation process to prepare indium tin oxide nanopowders |
000981 |
| Uniform In2S3 octahedron-built microspheres: Bioinspired synthesis and optical properties |
000992 |
| The preparation of CuInSe2 films by solvothermal route and non-vacuum spin-coating process |
000998 |
| The effects of growth parameters on the RF-MBE growth of dilute InNSb films |
000A12 |
| Synthesis, Crystal Structure, and Photoluminescence of a Series of Zinc(II) Coordination Polymers with 1,4-Di(1H imidazol-4-yl)benzene and Varied Carboxylate Ligands |
000A35 |
| Structure distortion and magnetism in double perovskites Ca2-xLaxFeReO6 ( 0 < x ≤ 0.8) |
000A36 |
| Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering |
000A39 |
| Strained InGaAs/GaAs Quantum-Well Laser Emitting at 1054 nm |
000A56 |
| Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In |
000A59 |
| Pulsed electrodeposition of oxygen-free tin monosulfide thin films using lactic acid/sodium lactate buffered electrolytes |
000A60 |
| Properties of Photoelectricity of WOx-doped ITO thin Films |
000A61 |
| Preparation of lithium indium oxide via a rheological phase route and its electrochemical characteristics in LiOH and Li2SO4 solutions |
000A66 |
| Preparation and Characterization of CuInSe2 Thin Films Derived by Electrodeposition Process for Solar Cells |
000A67 |
| Preparation and Characterization of Cu(In,Ga)Se2 Thin Films Derived by Frequency Magnetron Sputtering |
000A75 |
| Performance of InSnZrO as transparent conductive oxides |
000A78 |
| Optical-electrical properties of AgInSbTe phase change thin films under single picosecond laser pulse irradiation |
000A86 |
| New promising phosphors Ba3InB9O18 activated by Eu3+/Tb3+ |
000A90 |
| Mobility enhancement of p-type SnO2 by In-Ga co-doping |
000A91 |
| Microwave hydrothermal synthesis and photocatalytic activity of AgIn5S8 for the degradation of dye |
000A92 |
| Microanalysis on CuInSe2 compound synthesized by mechanochemical processing |
000B03 |
| Ligand-Directed Assembly of Asymmetric 1,3,5-Triazine Ligands Containing Pyridyl and Hydroxyl Groups |
000B11 |
| Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties |
000B22 |
| Influence of annealing conditions on the structure and compositions of electrodeposited CuInSe2 films |
000B33 |
| Hydrogen effects on crystallinity, photoluminescence, and magnetization of indium tin oxide thin films sputter-deposited on glass substrate without heat treatment |
000B41 |
| Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition |
000B44 |
| Flowerlike cubic β-In2S3 microspheres: Synthesis and characterization |
000B51 |
| Facile synthesis of SnO2 nanograss array films by hydrothermal method |
000B95 |
| Effect of vanadium doping on sintering and dielectric properties of strontium barium niobate ceramics |
000B96 |
| Effect of triethanolamine and sodium dodecyl sulfate on the formation of CuInSe2 thin films by electrodeposition |
000B97 |
| Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process |
000C01 |
| Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method |
000C16 |
| Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses |
000C20 |
| Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD |
000C21 |
| Characterization of optoelectronic properties of the ZnO nanorod array using surface photovoltage technique |
000C23 |
| Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer |
000C25 |
| Blue-shift photoluminescence from porous InAlAs |
000C27 |
| Bi3In4S10 and Bi14.7In11.3S38: Two new bismuth sulfides with interesting Bi-Bi bonding |
000C33 |
| Adjustment of the selenium amount during ion beam sputtering deposition of CIS thin films |
000C58 |
| White light emission from Tm3+/Dy3+ co-doped oxyfluoride germanate glasses under UV light excitation |
000C73 |
| Ti02 nanoparticles incorporated with CuInS2 clusters: preparation and photocatalytic activity for degradation of 4-nitrophenol |
000C75 |
| Thermoelectric properties of indium-filled skutterudites prepared by combining solvothermal synthesis and melting |
000C80 |
| The synthesis of Sn-doped ZnO nanowires on ITO substrate and their optical properties |
000C81 |
| The properties of direct current sputtering deposited InN thin films under different gas flow rates |
000C82 |
| The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers |
000C84 |
| The influence of alloy phases in the precursors on the selenization reaction mechanisms |
000C90 |
| The effect of Sr on the properties of Y-doped ceria electrolyte for IT-SOFCs |
000C99 |
| Synthesis, crystal structure and optical properties of an indium phosphate K3In3P4O16 |
000D02 |
| Synthesis of In/InP core-shell nanospheres and their transformation into InP hollow nanospheres |
000D04 |
| Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties |
000D07 |
| Synthesis and photoelectrochemical properties of thin bismuth molybdates film with various crystal phases |
000D11 |
| Synthesis and characterization of In2S3 nanoparticles |
000D14 |
| Syntheses, crystal and electronic structures of two new lead indium phosphates: Pb2In4P6O23 and Pb2InP3O11 |
000D16 |
| Surface characterization of Ag-ITO cermet films prepared by a new sol-gel method |
000D19 |
| Substitution effect on the thermoelectric properties of reduced Nb-doped Sr0.95La0.05TiO3 ceramics |
000D24 |
| Study of the morphological change of amorphous ITO films after temperature-humidity treatment |
000D27 |
| Structure and optical properties of ZnO:V thin films with different doping concentrations |
000D28 |
| Structure and optical properties of SnS thin film prepared by pulse electrodeposition |
000D37 |
| Solvothermal syntheses and structures of indium(III)-binaphthalenyl dicarboxylate complexes with yellow/blue luminescence |
000D39 |
| Solid source MBE growth of quantum cascade lasers |
000D40 |
| Small angle X-ray scattering studies on structural evolution during calcination of sol-gel ITO nano-powders |
000D45 |
| Room Temperature Ferromagnetism in Cobalt-Doped LiNbO3 Single Crystalline Films |
000D51 |
| Raman property of In doped ZnO superlattice nanoribbons |
000D67 |
| Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE |
000D73 |
| Photoelectrochromic properties of NiO film deposited on an N-doped TiO2 photocatalytical layer |
000D84 |
| Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range |
000D93 |
| Novel in situ resistance measurement for the investigation of CIGS growth in a selenization process |
000D97 |
| New indium selenite-oxalate and indium oxalate with two-and three-dimensional structures |
000E00 |
| Multifractal formation studies of layer-by-layer deposited silver-containing indium tin oxide nanocomposite films by GISAXS |
000E05 |
| Mn-AlInN: a new diluted magnetic semiconductor |
000E11 |
| Low-temperature synthesis of regenerable TiO2-xNx nanocrystals in Nafion membrane and the promotive effect of Nafion in photocatalysis and N-doping |
000E17 |
| Ir(ppy)3 phosphorescent microrods and nanowires : promising micro-phosphors |
000E21 |
| Investigation of microstructuring CuInGaSe2 thin films with ultrashort laser pulses |
000E23 |
| Influence of fuel-to-oxidizer ratio on the magnetic properties of Fe-doped In2O3 nanoparticles synthesized by solution combustion method |
000E25 |
| Influence of Mn doping on the microstructure and optical properties of CdS |
000E34 |
| InGaN nanorod arrays grown by molecular beam epitaxy : Growth mechanism structural and optical properties |
000E51 |
| Growth and characterization of ZnIn2Se4 buffer layer on CuInSe2 thin films |
000E69 |
| Facile solution-controlled growth of CuInS2 thin films on FTO and TiO2/FrO glass substrates for photovoltaic application |
000E76 |
| Fabrication and characterization of CuInS2 films by chemical bath deposition in acid conditions |
000F04 |
| Effect of gas composition on the growth and electrical properties of boron-doped diamond films |
000F05 |
| Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique |
000F07 |
| Effect of annealing on electrical properties of InAsSb films grown on GaAs substrates by molecular beam epitaxy |
000F37 |
| Conductivity enhancement by slight indium doping in ZnO nanowires for optoelectronic applications |
000F46 |
| CVD growth of InGaN nanowires |
000F48 |
| Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells |
000F62 |
| A study of two-step growth and properties of In0.82Ga0.18As on InP |
000F76 |
| 3D pillar-layered coordination polymers based on 4d-4f heterometallic assembly |
000F86 |
| Ultrathin β-In2S3 Nanobelts : Shape-Controlled Synthesis and Optical and Photocatalytic Properties |
001002 |
| The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition |
001006 |
| The characterization and properties of InN grown by MOCVD |
001025 |
| Study on the Ce substitution effects of BiFeO3 films on ITO/glass substrates |
001029 |
| Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering |
001030 |
| Structural characterization of Mn implanted AlInN |
001031 |
| Structural and photoluminescence properties of single-crystalline In2O3 films grown by metal organic vapor deposition |
001032 |
| Structural and photoluminescence properties of single crystalline SnO2:In films deposited on α-Al2O3 (0001) by MOCVD |
001034 |
| Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step |
001055 |
| Preparation of indium tin oxide thin films without external heating for application in solar cells |
001056 |
| Preparation of CuInSe2 thin films by pulsed laser deposition the Cu-In alloy precursor and vacuum selenization |
001057 |
| Preparation of Cr-doped Ba4In2O7/In2O3 nanocomposite and its photo-assisted chargeability in hydrogen storage alloy/photocatalyst electrode |
001058 |
| Preparation and characterization of copper indium selenide powders and films |
001068 |
| Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide |
001080 |
| One-Step Aqueous Solvothermal Synthesis of In2O3Nanocrystals |
001083 |
| Nitrogen Incorporation Characteristics of 4H-SiC Epitaxial Layer |
001112 |
| Influence of mechanical agitation on ZnSe electrodeposition in H2SeO3-ZnSO4 aqueous solution |
001132 |
| High temperature x-ray diffraction study on phase transformation and lattice thermal expansion of mercury indium telluride crystals |
001135 |
| Hierarchical chlorine-doped rutile TiO2 spherical clusters of nanorods : Large-scale synthesis and high photocatalytic activity |
001136 |
| Growth and characterization of the InN film ammonification technique |
001151 |
| Evolution in shapes of a series of (111)-based In2O3 particles |
001156 |
| Enhanced multiferroic properties of (110)-oriented BiFeO3film deposited on Bi3.5Nd0.5Ti3O12-buffered indium tin oxide/Si substrate |
001167 |
| Electrodeposited and selenized CIGS thin films for solar cells |
001169 |
| Electrochemical reactivity mechanism of CuInSe2 with lithium |
001173 |
| Electrocatalytic oxidation of hydrazine compound on electroplated Pd/WO3 film |
001182 |
| Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD) |
001183 |
| Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) |
001185 |
| Effect of heat treatment on the property of CUInS2 thin film prepared by chemical bath deposition |
001187 |
| Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD |
001204 |
| Crystal structure of the 2/1 cubic approximant Ag42In42Yb16 |
001214 |
| Characterization of a-plane InN film grown on r-plane sapphire by MOCVD |
001219 |
| Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering |
001237 |
| A novel sonochemical synthesis and nanostructured assembly of polyvinylpyrrolidone-capped CdS colloidal nanoparticles |
001241 |
| A complexant-assisted hydrothermal procedure for growing well-dispersed InP nanocrystals |
001244 |
| A Host Crystal for the Rare-Earth Ion Dopants : Synthesis of Pure and Ln-Doped Urchinlike BiPO4 Structure and Its Photoluminescence |
001248 |
| (2,2'-bipy)[In2(OH)2(H2O)](SO4)2 : The first indium sulfate with a layer structure |
001255 |
| Two-step growth of ZnO films with high conductivity and high roughness |
001262 |
| The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED |
001265 |
| The high mobility InN film grown by MOCVD with GaN buffer layer |
001266 |
| The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE |
001267 |
| The growth and field electron emission of InGaN nanowires |
001282 |
| Synthesis and field-emission properties of the tungsten oxide nanowire arrays |
001300 |
| Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition |
001301 |
| Structural and optical properties of wurtzite InN grown on Si(111) |
001309 |
| Shape-controlled synthesis of BiIn alloy nanostructures |
001310 |
| Shape-controlled synthesis and optical characterization of chalcopyrite CuInS2 micro structures |
001311 |
| Self-assembly monolayer of anatase titanium oxide from solution process on indium tin oxide glass substrate for polymer photovoltaic cells |
001319 |
| Properties of indium-doped ZnO films prepared in an oxygen-rich plasma |
001326 |
| Photovoltaic effects in InGaN structures with p-n junctions |
001341 |
| New synthesis of single-crystalline InVO4 nanorods using an ionic liquid |
001345 |
| Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching |
001373 |
| In2O3 nanotowers: Controlled synthesis and mechanism analysis |
001389 |
| Growth, structure and electrical properties of mercury indium telluride single crystals |
001390 |
| Growth and characterization of nonlinear optical crystal Lu0.66La0.95Sc2.39 (BO3 )4 |
001391 |
| Growth and characterization of electro-deposited Cu2O and Cu thin films by amperometric I-T method on ITO/glass substrate |
001392 |
| Growth and characterization of In doped Cd0.8Mn0.2Te single crystal |
001394 |
| Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition |
001401 |
| Fabrication and optical property of single-crystalline InSb nanowire arrays |
001419 |
| Electronic structure and photocatalytic properties of In6WO12 |
001423 |
| Electrodeposition of p-Type CuSCN Thin Films by a New Aqueous Electrolyte With Triethanolamine Chelation |
001438 |
| Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol-gel process |
001439 |
| Effects of post-heat treatment on the characteristics of chalcopyrite CuInSe2 film deposited by successive ionic layer absorption and reaction method |
001440 |
| Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD |
001445 |
| Effect of incorporating nonlanthanoidal indium on optical properties of ferroelectric Bi4Ti3O12 thin films |
001449 |
| Effect of K-doping on the dielectric and tunable properties of Ba0.6Sr0.4TiO3 thin films prepared by RF magnetron sputtering |
001468 |
| Comparative study on the synthesis, photoluminescence and application in InGaN-based light-emitting diodes of TGA:Ce3+ phosphors |
001479 |
| Buffer influence on AlSb/InAs/AlSb quantum wells |
001503 |
| Transport properties of InSb nanowire arrays |
001504 |
| Transparent conductive oxide thin films of tungsten-doped indium oxide |
001516 |
| The superconductivity in boron-doped polycrystalline diamond thick films |
001527 |
| Synthesis and structures of morphology-controlled ZnO nano- and microcrystals |
001530 |
| Synthesis and crystal structure of a new Zintl phase Sr5In2Bi6 |
001532 |
| Synthesis and characterization of porous single-crystal-like In2O3 nanostructures via a solvothermal-annealing route |
001547 |
| Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD |
001548 |
| Spontaneous growth of indium nanostructures |
001552 |
| Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB) |
001555 |
| Separated AlxIn1-xN quantum dots grown by plasma-reactive co-sputtering |
001562 |
| Preparation and photoelectrocatalytic activity of Pt(TiO2)-TiO2 hybrid films |
001571 |
| Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition |
001577 |
| Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes |
001595 |
| Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy |
001610 |
| Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer |
001612 |
| Hydrothermal synthesis and crystal structures of two NLO compounds, NaIO3.H2O and In(IO3)3 |
001621 |
| Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties |
001622 |
| Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy |
001623 |
| Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents |
001628 |
| Ferroelectric properties of BiFeO3 films grown by sol-gel process |
001636 |
| Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition |
001651 |
| Effects of temperature on indium tin oxide particles synthesized by co-precipitation |
001655 |
| Effect of temperature on selenization process of metallic Cu-In alloy precursors |
001660 |
| Double-source approach to In2S3 single crystallites and their electrochemical properties |
001672 |
| Crystal structures of alkali-metal indium (III) phosphates of [M3In(PO4)2]N (M = K, n = 10; M = Rb, n = 2) compounds, and band structures and chemical bond properties of [Rb3In(PO4)2]2 crystal |
001674 |
| Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition |
001676 |
| Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films |
001679 |
| Characterization of SnS films prepared by constant-current electro-deposition |
001681 |
| Catalytic growth of In2O3 nanobelts by vapor transport |
001688 |
| Anisotropic growth of In(OH)3 nanocubes to nanorods and nanosheets via a solution-based seed method |
001694 |
| 3-D indium(III)-btc channel frameworks and their ion-exchange properties (btc = 1,3,5-benzenetricarboxylate) |
001703 |
| Thermal annealing of InN films grown by metal-organic chemical vapor deposition |
001705 |
| The structural and optical properties of Cu2O films electrodeposited on different substrates |
001710 |
| The effect of hydrothermal growth temperature on preparation and photoelectrochemical performance of ZnO nanorod array films |
001721 |
| Synthesis and characterization of In2O3/SnO2 hetero-junction beaded nanowires |
001728 |
| Study on the thermal stability of InN by in-situ laser reflectance system |
001738 |
| Sol-gel synthesis and photoluminescence of III-V semiconductor InAs nanocrystals embedded in silica glasses |
001740 |
| Size-controllable growth of Single crystal In(OH)3 and In2O3 nanocubes |
001743 |
| Self-assembly of a novel β-In2S3 nanostructure exhibiting strong quantum confinement effects |
001756 |
| Post-growth treatment effects on properties of CuInS2 thin films deposited by RF reactive sputtering |
001772 |
| New method of synthesizing In2O3 nanoparticles for application in volatile organic compounds (VOCs) gas sensors |
001779 |
| Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates : Strong effect of growth conditions on film structure |
001780 |
| MOCVD route to In2O3 thin films on SiO2substrates |
001783 |
| Low-temperature growth of InN by MOCVD and its characterization |
001784 |
| Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy |
001789 |
| Interface effect of InSb quantum dots embedded in SiO2 matrix |
001790 |
| Influence of the low temperature buffer layer on InP epitaxial growth on GaAs substrates |
001793 |
| Influence of post-heat treatment on the properties of CuInS2 thin films deposited by an ion layer gas reaction (ILGAR) |
001794 |
| Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures |
001803 |
| Hydrothermal synthesis of porous FeIn2S4 microspheres and their electrochemical properties |
001813 |
| Growth and characterization of InN on sapphire substrate by RF-MBE |
001815 |
| GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures |
001826 |
| Electrochemical deposition and characterization of wide band semiconductor ZnO thin film |
001831 |
| Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy |
001834 |
| Effect of copper, aluminum and tin addition on thermal contraction of indium melt clusters |
001842 |
| Continuous-wave operation quantum cascade lasers at 7.95 μm |
001843 |
| Construction and photoluminescence of In2O3 nanotube array by CVD-template method |
001860 |
| A simple and rapid method for preparing indium nanoparticles from bulk indium via ultrasound irradiation |
001886 |
| Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature |
001920 |
| [Co(en)3][In3(H2PO4)6(HPO4)3].H2O: A new layered indium phosphate templated by cobalt complex |
001928 |
| The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells |
001929 |
| The first indium-organic two-dimensional layer network with rhombus grids |
001932 |
| The 2/1 cubic approximant of the Ag42In42Ca16 icosahedral quasicrystal |
001935 |
| Synthesis of metastable hexagonal In2O3 nanocrystals by a precursor-dehydration route under ambient pressure |
001940 |
| Synchrotron X-ray wavelength calibration using a diamond internal standard: application to low-temperature thermal-expansion studies |
001946 |
| Study of stimulated emission from InGaN/GaN multiple quantum well structures |
001947 |
| Study of photoluminescence and absorption in phase-separation InGaN films |
001949 |
| Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide |
001951 |
| Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows |
001987 |
| MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications |
001992 |
| Influence of threading dislocations on the properties of InGaN-based multiple quantum wells |
001996 |
| Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers |
001999 |
| In2O3 nanoparticles synthesized by mechanochemical processing |
001A00 |
| Hydrothermal synthesis of single crystalline In(OH)3 nanorods and their characterization |
001A01 |
| Hydrothermal synthesis and characterization of two new three-dimensional fluoroindium phosphates In4(PO4)4(H2O)4F2.C6H14N2 and In8(P04)8(H2O)8F4. (C5H14N2)2 |
001A12 |
| Femtosecond laser-induced crystallization in amorphous Sb-rich AgInSbTe films |
001A24 |
| Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD |
001A25 |
| Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells |
001A26 |
| Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells |
001A34 |
| Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition |
001A35 |
| Composition dependence of the Raman A1 mode and additional mode in tetragonal Cu-In-Se thin films |
001A37 |
| Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures |
001A45 |
| An approach to determine the chemical composition in InGaN/GaN multiple quantum wells |
001A47 |
| A novel transparent pn+ junction based on indium tin oxides |
001A60 |
| Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 |
001A68 |
| Optical properties of p-type In-doped SrTiO3 thin films |
001A94 |
| Observation of self-organized superlattice in AlGaInAsSb pentanary alloys |
001B08 |
| Strong green luminescence in quaternary InAlGaN thin films |
001B47 |
| Strain relaxation of InAs epilayer on GaAs under In-rich conditions |
001B49 |
| Solvothermal synthesis of the ternary semiconductor AInS2(A = Na, K) nanocrystal at low temperature |
001B55 |
| Preparation of ultrafine InN powder by the nitridation of In2O3 or In(OH)3 and its thermal stability |
001B71 |
| Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures |
001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
001B91 |
| In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate |
001B93 |
| Hydrothermal synthesis and characterization of CuIn2.0Se3.5 nanocrystallites |
001C01 |
| Growing and welding branched-structure semiconducting In2O3 nanowires |
001C07 |
| Fabrication and photoluminescence characteristics of single crystalline In2O3 nanowires |
001C24 |
| Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate |
001C25 |
| Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs |
001C27 |
| Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer |
001C32 |
| Correlation of viscosity and structural changes of indium melt |
001C33 |
| Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser |
001C49 |
| A route to Ag-catalyzed growth of the semiconducting In2O3 nanowires |
001C56 |
| Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy |
001C76 |
| Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer |
001D04 |
| Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer |
001D05 |
| Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer |
001D26 |
| Synthesis of oxygen-deficient indium-tin-oxide (ITO) nanofibers |
001D31 |
| Study on fluorine-doped indium oxide films deposited by reactive evaporating in CF4/O2 gases |
001D35 |
| Structural, optical, and electrical properties of indium tin oxide films with corundum structure fabricated by a sol-gel route based on solvothermal reactions |
001D36 |
| Strain relaxation of InP film directly grown on GaAs patterned compliant substrate |
001D48 |
| Optical properties of nanocrystalline Ga1-xInxSb/SiO2 films |
001D58 |
| Large-scale synthesis of In2O3 nanowires |
001D66 |
| Hydrothermal synthesis and crystal structure of the first ammonium indium(III) phosphate NH4In(OH)PO4 with spiral chains of InO4(OH)2 |
001D67 |
| High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition |
001D68 |
| Growth-dependent phonon characteristics in InN thin films |
001D74 |
| Fabrication and characterization of InP nanocrystals embedded in SiO2 matrix by RF magnetron co-sputtering |
001D80 |
| Estimation of InN phase inclusion in InGaN films grown by MOVPE |
001D86 |
| Dye-sensitized anatase titanium dioxide nanocrystalline with (001) preferred orientation induced by Langmuir-Blodgett monolayer |
001D90 |
| Crystal structure of rubidium indium (monophosphate-hydrogenmonoborate-monophosphate), RbIn][BP2O8(OH)] |
001D92 |
| Crystal structure of dilithium indium (monophosphate-monohydrogen-monophosphate), Li2In[(PO4)(HPO4)] |
001D93 |
| Crystal structure of diammonium indium (monophosphate-monohydrogen-monophosphate), (NH4)2In[(PO4)(HPO4)] |
001D94 |
| Crystal structure of ammonium indium di(hydrogenmonophosphate), (NH4)In[PO3(OH)]2 |
001E14 |
| Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells |
001E18 |
| Deep Hole Traps Created by Gamma-Ray Irradiation of GaInP |
001E78 |
| Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy |
001E83 |
| The photoluminescence characteristics of ZnS nanocrystal doped with M3+(M = In, Ga, Al) |
001E85 |
| The effects of dopant valence on the structure and electrical conductivity of LaInO3 |
001E89 |
| Synthesis and characterization of ternary CuInS2 nanorods via a hydrothermal route |
001F04 |
| Structural and electrochemical characterization of open-structured' ITO films |
001F05 |
| Size dependence of non-linear optical properties of SiO2 thin films containing InP nanocrystals |
001F11 |
| Preparation of indium tin oxide films and doped tin oxide films by an ultrasonic spray CVD process |
001F12 |
| Preparation and optical properties of InAs0.4P0.6 nanocrystal alloy embedded in SiO2 thin films |
001F38 |
| Hydrothermal synthesis and crystal structure of Na2In2[PO3(OH)]4.H2O with a new structure type |
001F45 |
| Growth of Bi3-2xCa2xFe5-x-yInyVxO12 crystals by top seed solution growth (TSSG) technique |
001F49 |
| Fabrication and optical absorption of ordered indium oxide nanowire arrays embedded in anodic alumina membranes |
001F58 |
| Effect of pH on the electrochemical deposition of cadmium selenide nanocrystal films |
001F74 |
| An effective way to detect the secondary phase in Sr-doped LaInO3 |
001F81 |
| A mild solvothermal route to chalcopyrite quaternary semiconductor CuIn(SexS1-x)2 nanocrystallites |
001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
002002 |
| Ellipsometric Study of the Optical Properties of InGaAsN Layers |
002005 |
| Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy |
002038 |
| Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence |
002044 |
| X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb-SiO2 composite films |
002047 |
| Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer |
002053 |
| The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate |
002066 |
| Sr-doped LaInO3 and its possible application in a single layer SOFC |
002077 |
| Preparation and characterization of indium films by electroless plating under hydrothermal conditions |
002084 |
| Photoconductive properties of ClAlPcCl and ClInPc composite thin film prepared by physical vapor deposition approach |
002097 |
| Highly ordered nanostructures of single crystalline GaN nanowires in anodic alumina membranes |
002098 |
| High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers |
002103 |
| Growth and characterization of high-quality GaInAs/AlInAs triple wells |
002114 |
| Elastic strain in InGaN and AlGaN layers |
002115 |
| Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice |
002122 |
| Effect of rapid thermal annealing on InGaAs/GaAs quantum wells |
002131 |
| Comparison study of ITO thin films deposited onto different substrates at room temperature |
002162 |
| Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition |
002195 |
| Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well |
002232 |
| Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures |
002249 |
| Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature |
002262 |
| Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates |
002297 |
| Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy |
002307 |
| Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy |
002315 |
| High resolution x-ray diffraction study of Bragg peak width in strained InGaAs/InAlAs/InP heterostructures |
002343 |
| Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies |
002346 |
| Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0 0 1) substrate measured by a series of symmetric double crystal X-ray diffraction |
002378 |
| Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy |
002384 |
| Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure |
002391 |
| InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy |
002394 |
| Hydrothermal synthesis of SrZrO3-α, [Sr1-xZrxO3-α] (M = Al, Ga, In, x ≤ 0.20) series oxides |
002431 |
| A metal-rich fluorinated indium phosphate, 4[NH3(CH2)3NH3]-3[H3O]-[In9(PO4)6(HPO4)2F16]-3H2O, with 14-membered ring channels |
002441 |
| Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer |
002462 |
| Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes |
002474 |
| [μ-(1,4-dibenzylpiperazine)-N:N']bis(trimethylindium) dibenzene solvate |
002476 |
| Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition |
002490 |
| Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells |
002494 |
| Short-wavelength phase-change optical data storage in In-Sb-Te alloy films |
002496 |
| Preparation and properties of indium tin oxide films deposited on polyester substrates by reactive evaporation |
002499 |
| New cuprates with the 1212 structure (Cd,M)(SrLa)2YCu2Oδ (M = Bi, In) |
002505 |
| Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition |
002519 |
| Electrodeposition and characterization of thallium(III) oxide films |
002579 |
| Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers |
002583 |
| Volume behavior of α-phase solution of In-Pb-Sn ternary system |
002584 |
| The stability of epitaxial Tl2Ba2CaCu2O8 thin films in water |
002627 |
| (5-benzyldibenzo[b,d]phosphole 5-oxide)-trimethylindium |
002630 |
| PtGe ohmic contact to n-type InP |
002641 |
| The properties of magneto-optical MnBiR (R = In, Ge, and Sn) thin films |
002678 |
| High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. I. Material study |
002717 |
| Growth of GaAs-InP heteromaterials and corresponding strain determination |
002718 |
| Growth of GaxIn1-xAs1-ySby alloys by metalorganic chemical vapor deposition |
002723 |
| Effect of annealing treatment on some properties of CdIn2O4 thin films |
002728 |
| Characterization of InxGa1-xAs/InP epilayers by X-ray double crystal rocking curve peak profile analysis |
002734 |
| Surface scattering of x rays from InP (001) wafers |
002753 |
| X-ray analysis of strain relaxation in strained-layer superlattices |
002755 |
| Raman-line-shape study of InxGa1-xAs on InP and GaAs substrates |
002783 |
| Synthesis and characterization of new cuprates with a (Bi, In)O monolayer : (Bi, In)Sr2 (Gd, Ca)Cu2Oy |
002790 |
| Optical and electrical properties of the langmuir-blodgett films prepared from a rare earth coordination compound |
002795 |
| Influence of the substitution of Y by In on the structure and magnetic property of Y2Cu2O5 |
002808 |
| X-ray characterization of strain relaxation in InGaAs/GaAs strained-layer superlattices |
002842 |
| A new one-dimensional compound : synthesis and structure of InNb3(Se2)6 |