| Ident. | Authors (with country if any) | Title |
|---|
| 000167 |
| New wide-bandgap organic donor and its application in UVB sensors with high responsivity |
| 000188 |
| Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing |
| 000246 |
| Graphene quantum dots-incorporated cathode buffer for improvement of inverted polymer solar cells |
| 000487 |
| Integrated ZnO nanotube arrays as efficient dye-sensitized solar cells |
| 000764 |
| Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals |
| 000765 |
| Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals |
| 000F47 |
| Bright and color-saturated quantum dot light-emitting diodes, new star for next generation displays and solid state lighting |
| 001048 |
| Red organic light-emitting diodes based on wide band gap emitting material as the host utilizing two-step energy transfer |
| 001129 |
| Highly efficient red phosphorescence from dopant polymer light emitting diodes based on mixed-ligand ruthenium(II) complex |
| 001131 |
| High-efficiency red and green light-emitting polymers based on a novel wide bandgap poly(2,7-silafluorene) |
| 001328 |
| Photon emitting, absorption and reconstruction of photons |
| 001475 |
| Characteristics of ITO films fabricated on glass substrates by high intensity pulsed ion beam method |
| 001622 |
| Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy |
| 001872 |
| Investigations on V-defects in quaternary AlInGaN epilayers |
| 001873 |
| Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers |
| 001876 |
| Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes |
| 001878 |
| 20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source |
| 001879 |
| Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes |
| 001884 |
| Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing |
| 001885 |
| Indium-assisted synthesis on GaN nanotubes |
| 001890 |
| InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer |
| 001896 |
| On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
| 001898 |
| Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions |
| 001903 |
| Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes |
| 001906 |
| High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding |
| 001910 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers |
| 001914 |
| Observation of spontaneous ordering in the optoelectronic material GaInNP |
| 001915 |
| Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)] |
| 001A54 |
| InN island shape and its dependence on growth condition of molecular-beam epitaxy |
| 001A60 |
| Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 |
| 001A64 |
| Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 83, 3626 (2003)] |
| 001A65 |
| Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
| 001A74 |
| Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells |
| 001A80 |
| Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths |
| 001A90 |
| Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
| 001A92 |
| Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells |
| 001B05 |
| Persistent photoconductivity in InxAlyGa1-x-yN quaternary alloys |
| 001B07 |
| Spectral analysis of high-harmonic coherent acoustic phonons in piezoelectric semiconductor multiple quantum wells |
| 001B12 |
| Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells |
| 001B14 |
| Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN |
| 001B15 |
| Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN |
| 001C08 |
| Fabrication and characterization of indium-doped p-type SnO2 thin films |
| 001C79 |
| Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures |
| 001C90 |
| Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures |
| 001C92 |
| Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells |
| 001C97 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys |
| 001D05 |
| Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer |
| 001E14 |
| Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells |
| 001E22 |
| Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well |
| 001E27 |
| Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN |
| 001E28 |
| Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys |
| 001E35 |
| Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy |
| 001E46 |
| Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes |
| 001E48 |
| Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction |
| 001E49 |
| Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
| 001E69 |
| Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells |
| 001E71 |
| Persistent photoconductivity in InGaN/GaN multiquantum wells |
| 002007 |
| Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy |
| 002008 |
| Photoelectrochemical etching of InxGa1-xN |
| 002016 |
| Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy |
| 002036 |
| Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy |
| 002040 |
| Stimulated emission study of InGaN/GaN multiple quantum well structures |
| 002152 |
| Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer |
| 002153 |
| Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer |
| 002171 |
| Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells |
| 002192 |
| Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002198 |
| Piezoelectric effects in the optical properties of strained InGaN quantum wells |
| 002297 |
| Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy |
| 002308 |
| Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition |
| 002312 |
| Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN |
| 002332 |
| Optical modes within III-nitride multiple quantum well microdisk cavities |
