| Ident. | Authors (with country if any) | Title |
|---|
| 000160 |
| Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy |
| 000304 |
| Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures |
| 000F24 |
| Design and epitaxy of structural III-nitrides |
| 000F53 |
| Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition |
| 001238 |
| A novel butt-joint scheme for the preparation of electro-absorptive lasers |
| 001265 |
| The high mobility InN film grown by MOCVD with GaN buffer layer |
| 001329 |
| Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion |
| 001400 |
| Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE |
| 001420 |
| Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy |
| 001456 |
| Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser |
| 001477 |
| Catalyst-free synthesis of vertically aligned screw-shape InZnO nanorods array |
| 001478 |
| Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser |
| 001987 |
| MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications |
| 001988 |
| MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells |
| 001A25 |
| Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells |
| 001A65 |
| Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
| 001B03 |
| High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes |
| 001B23 |
| Void formation and failure in InGaN/AlGaN double heterostructures |
| 001B46 |
| Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate |
| 001C56 |
| Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy |
| 001C87 |
| 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region |
| 001C96 |
| Real index-guided InGaAlP red lasers with buried tunnel junctions |
| 001D37 |
| Statistical investigation on morphology development of gallium nitride in initial growth stage |
| 001D42 |
| Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN |
| 001F32 |
| Indium doping effect on GaN in the initial growth stage |
| 002002 |
| Ellipsometric Study of the Optical Properties of InGaAsN Layers |
| 002095 |
| In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE |
| 002168 |
| A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN |
| 002172 |
| Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes |
| 002180 |
| AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology |
| 002182 |
| Superlatticed negative differential-resistance heterojunction bipolar transistor |
| 002187 |
| High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy |
| 002189 |
| Heteroepitaxy of germanium on Si(103) and stable surfaces of germanium |
| 002200 |
| Determination of the valence-band offset for GaInAsSb/InP heterostructure |
| 002201 |
| Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy |
| 002297 |
| Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy |
| 002307 |
| Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy |
| 002316 |
| An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy |
| 002443 |
| Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions |
| 002609 |
| Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas |
| 002611 |
| Investigation of strain-compensated InGaAs(P)/InGaAs(P)/InP multiple quantum well structures grown by LP-MOVPE |
| 002639 |
| Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy |
| 002686 |
| Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates |
