Serveur d'exploration sur l'Indium

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Time resolved spectra And NotZ. Y. Xu

List of bibliographic references

Number of relevant bibliographic references: 25.
Ident.Authors (with country if any)Title
000423 Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties
000485 Interfacial Charge Carrier Dynamics of the Three-Component In2O3-TiO2-Pt Heterojunction System
000598 Controlled synthesis of luminescent CuInS2 nanocrystals and their optical properties
000718 Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN
000765 Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals
000823 Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
000844 Growth and optical properties of tetrapod-like indium-doped ZnO nanorods with a layer-structured surface
000C16 Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses
001159 Emission dynamics of InAs self-assembled quantum dots with different cap layer structures
001260 The state filling effect in p-doped InGaAs/GaAs quantum dots
001297 Structure dependence of ultrafast third-order optical nonlinearity for GeS2-In2S3-CsI chalcohalide glasses
001421 Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy
001507 Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
001557 Role of deep traps in carrier generation and transport in differently doped InP wafers
001807 High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array
001879 Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
001969 Photophysical studies on axially substituted indium and gallium phthalocyanines upon UV-Vis laser irradiation
001A79 Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K
001B07 Spectral analysis of high-harmonic coherent acoustic phonons in piezoelectric semiconductor multiple quantum wells
001C79 Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
002016 Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy
002171 Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells
002329 Differential reflection dynamics in InAsxP1-x/InP (x≤0.35) strained-multiple-quantum wells
002342 Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells
002450 Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

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