Ident. | Authors (with country if any) | Title |
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000423 |
| Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties |
000485 |
| Interfacial Charge Carrier Dynamics of the Three-Component In2O3-TiO2-Pt Heterojunction System |
000598 |
| Controlled synthesis of luminescent CuInS2 nanocrystals and their optical properties |
000718 |
| Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN |
000765 |
| Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals |
000823 |
| Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers |
000844 |
| Growth and optical properties of tetrapod-like indium-doped ZnO nanorods with a layer-structured surface |
000C16 |
| Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses |
001159 |
| Emission dynamics of InAs self-assembled quantum dots with different cap layer structures |
001260 |
| The state filling effect in p-doped InGaAs/GaAs quantum dots |
001297 |
| Structure dependence of ultrafast third-order optical nonlinearity for GeS2-In2S3-CsI chalcohalide glasses |
001421 |
| Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy |
001507 |
| Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots |
001557 |
| Role of deep traps in carrier generation and transport in differently doped InP wafers |
001807 |
| High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array |
001879 |
| Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes |
001969 |
| Photophysical studies on axially substituted indium and gallium phthalocyanines upon UV-Vis laser irradiation |
001A79 |
| Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K |
001B07 |
| Spectral analysis of high-harmonic coherent acoustic phonons in piezoelectric semiconductor multiple quantum wells |
001C79 |
| Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures |
002016 |
| Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy |
002171 |
| Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells |
002329 |
| Differential reflection dynamics in InAsxP1-x/InP (x≤0.35) strained-multiple-quantum wells |
002342 |
| Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells |
002450 |
| Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature |