| Ident. | Authors (with country if any) | Title |
|---|
| 000850 |
| GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy |
| 000A39 |
| Strained InGaAs/GaAs Quantum-Well Laser Emitting at 1054 nm |
| 000A80 |
| Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers |
| 000B12 |
| Investigation on multiple-port microcylinder lasers based on coupled modes |
| 000E08 |
| Metamorphic InGaAs telecom lasers on GaAs |
| 000E77 |
| Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays |
| 000F77 |
| 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration |
| 001238 |
| A novel butt-joint scheme for the preparation of electro-absorptive lasers |
| 001358 |
| Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy |
| 001368 |
| Key issues associated with low threshold current density for InP-based quantum cascade lasers |
| 001385 |
| High-power InGaAs VCSEL's single devices and 2-D arrays |
| 001404 |
| Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings |
| 001405 |
| Equilateral-triangle-resonator injection lasers with directional emission |
| 001444 |
| Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers |
| 001456 |
| Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser |
| 001523 |
| Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation |
| 001591 |
| Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission |
| 001693 |
| A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD |
| 001798 |
| InGaAs/InGaAsP microavity laser with directional output waveguide |
| 001806 |
| High-volume production of 650nm GaInP/AlGaInP laser diodes |
| 001869 |
| 980 nm high power strained quantum well lasers array fabricated by MBE |
| 001870 |
| 980 nm QCW high power semiconductor lasers array |
| 001974 |
| Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm |
| 001A49 |
| A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics |
| 001B92 |
| Improved performance of 1.3 μm InGaAsP-InP lasers with an AlInAs electron stopper layer |
| 001C48 |
| A simple model for optimization design of high performance In1-x-yGayAlxAs strained MQW DFB lasers |
| 001E87 |
| Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers |
| 001F62 |
| Design of the active structure of high-performance 1.55-μm In1-x-yGayAlxAs strained MQW lasers |
| 001F66 |
| Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE |
| 001F69 |
| Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers |
| 001F72 |
| Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations |
| 002100 |
| High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers |
| 002271 |
| High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition |
| 002427 |
| Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers |
| 002432 |
| 980 nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition |
| 002452 |
| Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region |
