| Ident. | Authors (with country if any) | Title |
|---|
| 000147 |
| Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure |
| 000162 |
| Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples |
| 000214 |
| InP nanowires synthesized via solvothermal process with CTAB assisted |
| 000235 |
| Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates |
| 000333 |
| A reduced electron-extraction barrier at an interface between a polymer poly(3-hexylthiophene) layer and an indium tin oxide layer |
| 000426 |
| Relationship between the short-range order and electrical resistivity in liquid indium-antimony |
| 000429 |
| Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors |
| 000580 |
| Effect of Molecular Passivation on the Doping of InAs Nanowires |
| 000592 |
| DFT and Experimental Exploration of the Mechanism of InCl3-Catalyzed Type II Cycloisomerization of 1,6-Enynes: Identifying InCl2+ as the Catalytic Species and Answering Why Nonconjugated Dienes Are Generated |
| 000593 |
| DFT Study of CO2 Adsorption and Hydrogenation on the In2O3 Surface |
| 000614 |
| Band-Edge Electronic Structure of β-In2S3: The Role of s or p Orbitals of Atoms at Different Lattice Positions |
| 000659 |
| Top Transmission Grating GaN LED Simulations for Light Extraction Improvement |
| 000664 |
| Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN |
| 000935 |
| Comparison between two types of photonic-crystal cavities for single-photon emitters |
| 000990 |
| Theoretical Study on Hetero-Diels-Alder Reaction of Butadiene with Benzaldehyde Catalyzed by Chiral InIII Complexes |
| 000A94 |
| Magneto-optical absorption by InAs/GaSb-based type II and broken-gap quantum well |
| 000B12 |
| Investigation on multiple-port microcylinder lasers based on coupled modes |
| 000B15 |
| Intracavity Second Harmonic Generation Characteristics of Semiconductor Disk Laser |
| 000B30 |
| Hyperfine induced intensity redistribution in In II |
| 000C77 |
| Theoretical study on InxGa1-xN/S hetero-junction solar cells |
| 000C78 |
| Theoretical study of ultrafast index dynamics in semiconductor optical amplifiers |
| 000C79 |
| Theoretical study of InGaAsP-InP active microring |
| 000C99 |
| Synthesis, crystal structure and optical properties of an indium phosphate K3In3P4O16 |
| 000D14 |
| Syntheses, crystal and electronic structures of two new lead indium phosphates: Pb2In4P6O23 and Pb2InP3O11 |
| 000E40 |
| Highly efficient four-wave mixing via intersubband transitions in InGaAs/AlAs coupled double quantum well structures |
| 000E60 |
| First-principles calculations on structure and elasticity of wurtzite-type indium nitride under pressure |
| 000E64 |
| Finite Element Analysis of the InP Nano Inner Cladding Fiber |
| 000E84 |
| Electrosynthesis of polyfluorene in an ionic liquid and characterization of its stable electrocatalytic activity for formic acid oxidation |
| 000E88 |
| Electronic structure and optical properties of In doped SrTiO3/MgO(001) |
| 001022 |
| Superluminescent Diode Monolithically Integrated with Novel Y-Branch by Bundle Integrated Waveguide for Fiber Optic Gyroscope |
| 001035 |
| Strain Engineered Quantum Dots for Long Wavelength Emission |
| 001040 |
| Simulation of multimode interference couplers with deep rib structure and tunable power splitting ratio |
| 001047 |
| SBS slow light using a novel optical fibre doped with nano-particles |
| 001106 |
| Large-Scale Synthesis of In2O3 Nanocubes Under Nondynamic Equilibrium Model |
| 001161 |
| Electronic structures and optical properties of wurtzite type LiBSe2 (B = Al, Ga, In) : A first-principles study |
| 001288 |
| Surface tension calculation of the Sn-Ga-In ternary alloy |
| 001390 |
| Growth and characterization of nonlinear optical crystal Lu0.66La0.95Sc2.39 (BO3 )4 |
| 001404 |
| Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings |
| 001494 |
| A Novel Optical Fibre Doped with the Nano-material as InP |
| 001509 |
| Thermo-chemical properties of aqueous solution containing ionic liquids. 1. The heat of reaction mixed 1-methyl-3-butylimidazolium chloride with InCl3 |
| 001540 |
| Studies on the thermodynamic properties of new ionic liquids : 1 -Methyl -3 -pentylimidazolium salts containing metal of group III |
| 001602 |
| Influence of light intensity on crossed-beam photorefractive gratings in doubly doped LiNbO3 crystals |
| 001624 |
| Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors |
| 001689 |
| Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator |
| 001731 |
| Studies on the properties of ionic liquid EMIInCl4 |
| 001771 |
| One-dimensional tunable photonic crystals by means of external magnetic fields |
| 001810 |
| Heat management of MBE-grown antimonide lasers |
| 001819 |
| Exciton states and their entanglement in coupled quantum dots |
| 001905 |
| Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells |
| 001907 |
| Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures |
| 001925 |
| The size-dependent phonon frequency of semiconductor nanocrystals |
| 001943 |
| Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers |
| 001953 |
| Steady-state and small signal analysis of terahertz ballistic tunnel transit-time oscillator |
| 001958 |
| Similarity of plasma conditions of some Ne-like X-ray lasers and their partner Ni-like X-ray lasers |
| 001979 |
| Nonlinearity in power-current characteristics of narrow-pulse-driven AlGaInP laser diodes |
| 001986 |
| Melting and surface melting of low-dimensional In crystals |
| 001A17 |
| Experimental and theoretical studies of the propargyl-allenylindium system |
| 001A55 |
| Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices |
| 001A57 |
| Interband Impact Ionization and Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterostructures |
| 001A76 |
| Absorption of surface acoustic waves by a two-dimensional electron gas in the presence of spin-orbit interaction |
| 001A97 |
| Enhanced spontaneous emission from InAs/GaAs self-organized quantum dots in a GaAs photonic-crystal-based microcavity |
| 001B02 |
| Structural Design of a Passive Matrix (PM) Color Organic Light-Emitting Device |
| 001B26 |
| Thermodynamic modeling of the Au-In-Sb ternary system |
| 001B27 |
| Thermodynamic analysis on MOVPE growth of Ga1-xInxP semiconductor |
| 001B31 |
| The beam properties of high-power InGaAs/AlGaAs quantum well lasers |
| 001B32 |
| TDHF-SOS treatments on linear and nonlinear optical properties of III-V semiconductor clusters (Ga3As3, Ga3Sb3, In3P3, In3As3, In3Sb3) |
| 001B40 |
| Studies on room temperature ionic liquid InCl3-EMIC |
| 001B52 |
| Rashba-effect-induced spin dephasing in n-type InAs quantum wells |
| 001B69 |
| Optical gain of InGaAsSb/AlGaAsSb type-I long wavelength quantum-well lasers |
| 001B80 |
| Manipulation of spin dephasing in InAs quantum wires |
| 001C11 |
| Experimental and theoretical study on the electronic states and spectra of InBr |
| 001C22 |
| Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure |
| 001C26 |
| Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer |
| 001C30 |
| Cyclotron resonance of polarons in ternary mixed crystals |
| 001C36 |
| Calculating models of mass action concentration for metallic melts Ag-In-Sm |
| 001C45 |
| Accurate interband-energy measurements from Ellipsometric spectra |
| 001C47 |
| Ab initio calculations on the ground and low-lying excited states of InH |
| 001C48 |
| A simple model for optimization design of high performance In1-x-yGayAlxAs strained MQW DFB lasers |
| 001C61 |
| Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells |
| 001C64 |
| Band-Gap Bowing Parameter of the AlxIn1-xN Derived from Theoretical Simulation |
| 001C66 |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
| 001C67 |
| First-principles identification of quasi-two-dimensional Fermi surface nesting on a metallic c(2×2)-In/Cu(001) surface |
| 001C70 |
| Polaron model in self-assembled InAs/GaAs quantum dots- A perturbative approach |
| 001C72 |
| Ab initio studies of structural stability and magnetism in Ni3In |
| 001C75 |
| Ordering parameter and band-offset determination for ordered GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells |
| 001C86 |
| Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors |
| 001C93 |
| Few-electron filling effect in laterally coupled spherical InAs/GaAs quantum-dot system |
| 001D06 |
| Simulation Study of Reflective-Type Carbon Nanotube Field Emission Display |
| 001D15 |
| Thermodynamic assessment of the Cu-In binary system |
| 001D16 |
| Theoretical study of C1========Pi;-x1Σ+ transition of InCl |
| 001D41 |
| Raman study of InAs quantum dots on GaAs/InP grown by low pressure metal-organic chemical vapor deposition |
| 001D42 |
| Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN |
| 001D55 |
| Melting enthalpy depression of nanocrystals |
| 001D78 |
| Exciton states and interband optical transitions in InGaN quantum dots |
| 001D99 |
| Analysis of the Al content in semiconductor materials by null ellipsometric spectrometry |
| 001E09 |
| A new van Pauw disk to enhance geometric magnetoresistance at room temperature |
| 001E11 |
| 19F NMR chemical shielding for metal fluorides MF2(M = Zn, Cd, Pb), MF3 (M = Al, Ga, in) and SnF4 |
| 001E15 |
| InAs/GaAs single-electron quantum dot qubit |
| 001E21 |
| Phonon-induced photoconductive response in doped semiconductors |
| 001E22 |
| Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well |
| 001E51 |
| Band-Gap Bowing Parameter of the InxGa1-xN Derived From Theoretical Simulation |
| 001E81 |
| Thermodynamic superheating and relevant interface stability of low-dimensional metallic crystals |
| 001E82 |
| The vertical beam quality of GaInP/AlGaInP strained multiple quantum well laser |
| 001F01 |
| Studies on incorporation of As2 and As4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy |
| 001F24 |
| Miniature optical fiber sensor for alternating magnetic fields based on in-bica vanadium iron garnet crystal |
| 001F36 |
| Hysteresis in electronic transport through an ensemble of InAs self-assembled quantum dots |
| 001F62 |
| Design of the active structure of high-performance 1.55-μm In1-x-yGayAlxAs strained MQW lasers |
| 001F68 |
| Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures |
| 001F69 |
| Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers |
| 001F72 |
| Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations |
| 001F89 |
| Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Eletroabsorption Modulators with Negative Chirp |
| 002015 |
| Double-step resistive superconducting transitions of indium and gallium in porous glass |
| 002026 |
| Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire |
| 002029 |
| Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs schottky diodes |
| 002045 |
| White-emitting organic diode with a doped blocking layer between hole- and electron-transporting layers |
| 002074 |
| Quantum size effects in metal-induced Si(111) surface reconstructions |
| 002086 |
| Optical and recording properties of short wavelength optical storage materials |
| 002089 |
| Modelling for size-dependent and dimension-dependent melting of nanocrystals |
| 002106 |
| Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions |
| 002140 |
| An improvement on the prediction of optical constants and radiative properties by introducing an expression for the damping frequency in Drude model |
| 002144 |
| A thermodynamic assessment of the Ga-In-P system |
| 002168 |
| A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN |
| 002188 |
| Light-amplification competition between fanning noise and the signal beam in doped lithium niobate crystals |
| 002218 |
| Thermodynamic analysis of the Ga-In-As-Sb-C-H system |
| 002219 |
| Theoretical studies of the g factor of V3+ in III-V semiconductors |
| 002221 |
| The effect of strain on the miscibility gap in Ga-In-Sb ternary alloy |
| 002222 |
| The effect of high Landau subbands filling on the hot-electron magneto-transport ultrafast transient in InSb |
| 002304 |
| P-terminated InP(100) surface studied using a first-principles energy-minimization approach |
| 002310 |
| Erratum: Strain dependence of hole mass and optical anisotropy in (110) quantum wells [J. Appl. Phys. 82, 5711 (1997)] |
| 002319 |
| Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector |
| 002320 |
| Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser |
| 002322 |
| High-magnetic-field effects on the terahertz mobility of hot electrons in n-type InSb |
| 002327 |
| The threshold effect of incident light intensity for the photorefractive light-induced scattering in LiNbO3:Fe,M (M=Mg2+, Zn2+, In3+) crystals |
| 002328 |
| Surfactant-mediated layer-by-layer homoepitaxial growth of Cu/In/Cu(100) and Ag/Sb/Ag(111) systems: A theoretical study |
| 002375 |
| Optical absorption spectra of coupled quantum wires InAsxP1-x/InP |
| 002390 |
| Influence of the elastic energy due to lattice mismatch on phase equilibria in the epitaxy of As-Ga-In layers |
| 002425 |
| Analysis of the R0A product and detectivity in a GaInAsSb infrared photovoltaic detector |
| 002427 |
| Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers |
| 002430 |
| A thermodynamic assessment of the In-As-Sb system |
| 002437 |
| Strain dependence of hole mass and optical anisotropy in (110) quantum wells |
| 002438 |
| kp finite-difference method: Band structures and cyclotron resonances of AlxGa1-xSb/InAs quantum wells |
| 002454 |
| Intraband optical absorption in semiconductor coupled quantum dots |
| 002456 |
| The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices |
| 002480 |
| The electronic structure of AlyGaxIn1-x-yAs alloys and related heterojunctions |
| 002486 |
| Study on valence offsets at InxGa1-xAs/InxAl1-xAs heterojunction |
| 002493 |
| Solid-liquid equilibria for III-V quinary alloy semiconductors |
| 002531 |
| Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots |
| 002533 |
| Analysis of coupling effect on valence band structures of strained multiple quantum wells |
| 002545 |
| First-principles study of the quaternary semiconductor superlattices (GaX)1/(YAs)1 (X=N, P; Y=Al, In) |
| 002550 |
| Misfit dislocations in strained InxGa1-xAs heterostructure on patterned GaAs (001) substrate |
| 002553 |
| Effective-mass theory for InAs/GaAs strained coupled quantum dots |
| 002556 |
| Conduction-Valence Landau Level Mixing Effect |
| 002563 |
| Effect of disorder-induced band mixing on the conduction-band effective mass of InAlGaAs alloys lattice matched to InP |
| 002564 |
| Average bond energy model for determining valence-band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1-x |
| 002571 |
| Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures |
| 002579 |
| Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers |
| 002587 |
| The effect of nonparabolicity on electron transport in semiconductor thin films |
| 002600 |
| PIN avalanche photodiodes model for circuit simulation |
| 002607 |
| Monte Carlo simulation of exciton states in spatially separated electron-hole system |
| 002610 |
| Investigations on cyclic reciprocal derivative chronopotentiometry. Part 1. Theory for a reversible reaction |
| 002634 |
| Strong blueshift of the excitonic transition in the InGaAs/InP/InAsP antisymmetric coupled quantum wells |
| 002642 |
| Strong Stark effect of the intersubband transitions in the three coupled quantum wells: Application to voltage-tunable midinfrared photodetectors |
| 002650 |
| Solid-liquid and solid-vapor equilibrium of Ga-In-As-Sb system and artificial neural network prediction |
| 002672 |
| Very large Stark shift in three-coupled-quantum wells and their application to tunable far-infrared photodetectors |
| 002675 |
| Ab initio studies on the electronic structures of strained-layer superlattices (InAs)n(InP)n(001), (n = 1-5) |
| 002692 |
| Valence-band offset at InxGa1-xAs/GaAs heterojunctions under different strain conditions |
| 002693 |
| Valence-band lineups at highly strained Si-InP, Ge-InAs, and Si-Ge interfaces |
| 002698 |
| Small signal circuit model of single-mode laser diode for simulation of nonlinear distortion |
| 002712 |
| Impact ionization in balance equation theory |
| 002713 |
| Hot-electron magneto-transport in narrow-gap semiconductors in quantum magnetic field |
| 002714 |
| Hot electron high-frequency mobility in wide- and narrow-gap semiconductors |
| 002728 |
| Characterization of InxGa1-xAs/InP epilayers by X-ray double crystal rocking curve peak profile analysis |
| 002735 |
| Hole subband in p-type channel of semiconductor heterostructures |
| 002737 |
| Tunneling current due to incident electrons derived from the valence bands in AlSb-InAs-AlSb double-barrier structures |
| 002742 |
| Proposal of interband tunneling structures with strained layers |
| 002743 |
| Hot-electron cooling and hot-phonon generation with collision broadening |
| 002745 |
| Window layer for current spreading in AlGaInP light-emitting diode |
| 002747 |
| Enhancement of the Stark effect in AlInAs/GaInAs coupled quantum wells and their application to tunable midinfrared photodetectors |
| 002754 |
| Triply resonant enhancement of third-order nonlinear optical susceptibility in compositionally asymmetric coupled quantum wells |
| 002755 |
| Raman-line-shape study of InxGa1-xAs on InP and GaAs substrates |
| 002757 |
| Calculation of bond lengths in an In1-xGaxAs1-yPy quaternary-alloy semiconductor |
| 002766 |
| Valence-band offsets and band tailoring in compound strained-layer superlattices |
| 002767 |
| Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor |
| 002768 |
| Band-structure effects in AlSb-InAs-AlSb double-barrier structures |
| 002770 |
| The effect of the InAs layer thickness on the peak current density and subband properties of the GaSb/InAs/GaSb/AlSb/InAs structures |
| 002779 |
| Velocity-field relation in a single nonparabolic band system |
| 002781 |
| The Hall factor of hot-electron transport in non-parabolic Kane bands |
| 002800 |
| Effects of electron-interface-phonon interactions on interactions between electrons in double-heterostructures |
| 002801 |
| Effective interaction of electrons in quantum wells |
| 002804 |
| Analyses without calibration curve for determination of indium in sediment and geochemical samples |
| 002805 |
| An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers |
| 002808 |
| X-ray characterization of strain relaxation in InGaAs/GaAs strained-layer superlattices |
| 002813 |
| Transmission coefficient in symmetrical double-well potential structures |
| 002831 |
| Interaction in a chemisorption system of the submonolayer Cs on the InP(110) substrate |
| 002834 |
| GaSb/InAs superlattice structure for normal incidence intersubband infrared photodetectors |
| 002843 |
| A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface |
| 002845 |
| n-AlGaAs/InGaAs/n-GaAs double-modulation doped pseudomorphic HMET with MIS structure |
| 002848 |
| The interaction of interface optical phonons with an electron in an asymmetric quantum well |
| 002861 |
| Native defects in a (GaP)1/(InP)1 strained-layer superlattice : local electronic structure and diffusion mechanism |
| 002862 |
| Molecular-dynamics simulations on supercooled metallic liquids |
| 002864 |
| Magneto-excitons in quantum wells in parallel-field configuration |
| 002885 |
| Collector-emitter offset voltage in single- and double-base InGaAs(P)/InP heterojunction bipolar transistors |
| 002887 |
| Calculations of the spin-lattice coupling coefficients for 3d5 ions in III-V compounds |
| 002891 |
| A new treatment for calculating activities from phase diagrams involving intermediate compounds |
| 002897 |
| Superhigh-resolution structural image of InP along the [110] zone axis |
| 002900 |
| Structural stability and electronic density of states in (001)- and (111)-oriented (GAP)1/(InP)1 strained-layer superlattices |
| 002905 |
| Localized states induced by self-interstitial defects in ultra-thin GaP/InP strained-layer superlattices |
| 002907 |
| Influences of alloy disorder and interface roughness on optical spectra of InGaAs/GaAs strained-layer quantum wells |
| 002910 |
| Electronic structure in a Si-doped (GAP)1/(INP)1 strained-layer superlattice |
| 002911 |
| Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice : bulk and surface |
| 002931 |
| Electron subbands and wave functions of type-I and type-II quasiperiodic semiconductor superlattices |
| 002932 |
| Double-crystal X-ray rocking-curve peak splitting due to interference in triple-layer epitaxic structures |
| 002934 |
| Calculations of optical constants for GaxIn1-xPyAs1-y alloys lattice-matched to InP |
| 002939 |
| The electronic band-structures of the superlattices (Ga0.47In0.53As)m/(InP)m (110) with m=1-25 |
| 002940 |
| The density of states and dielectric constant of monolayer superlattice Ga0.47In0.53As/InP(110) |
| 002949 |
| Effect of the electric field on the binding energy of excitons in InAs/GaSb superlattices |
| 002955 |
| Magnetoplasmon-phonon coupling in a GaxIn1-xAs heterostructure |
| 002958 |
| A simple method for the evaluation of the surface in atom dimerisation and electronic states of the InP(100) surface |
| 002972 |
| Dangling bond electronic state on an InP(111) surface |
