| Ident. | Authors (with country if any) | Title |
|---|
| 000036 |
| Effect of Al content on the performance of Cu(In,Al)Se2 powders prepared by mechanochemical process |
| 000073 |
| Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing |
| 000106 |
| Spectroscopic properties of near-stoichiometric In:Er:LiNbO3 crystals |
| 000165 |
| Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface |
| 000185 |
| Low-temperature growth of InxGa1-xN films by radio-frequency magnetron sputtering |
| 000209 |
| Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers |
| 000245 |
| Green-white-yellow tunable luminescence from Dy3+-Tb3+-Eu3+ doped transparent glass ceramics containing GdSr2F7 nanocrystals |
| 000252 |
| First-principles investigation of the optical properties of CuIn (SxSe1-x)2 |
| 000257 |
| Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks |
| 000264 |
| Enhanced Ce3+ photoluminescence by Li+ co-doping in CaO phosphor and its use in blue-pumped white LEDs |
| 000388 |
| Synthesis of CuInSe2 monodisperse nanoparticles and the nanorings shape evolution via a green solution reaction route |
| 000400 |
| Study of sulphidation of Cu-In nanoparticle precursor films with an air-stable process |
| 000408 |
| Solvent-free synthesis of oxides for CuInSe2 thin films fabrication |
| 000538 |
| Explorations of new selenites of the group IIIA and IVA metals |
| 000568 |
| Effects of hydrothermal annealing on characteristics of CuInS2 thin films by SILAR method |
| 000702 |
| Sub-picosecond pulse generation using hybrid silicon and GaInP waveguides |
| 000814 |
| InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing |
| 000815 |
| InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm,Ho:YVO4 laser |
| 000822 |
| Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si ( 1 1 1 ) |
| 000827 |
| Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers |
| 000858 |
| Fabrication of highly ordered CuInSe2 films with hollow nanocones for anti-reflection |
| 000931 |
| Controlled synthesis of Cadmium-Free CuInS2/ZnS Quantum Dots |
| 000978 |
| Voltage-controlled negative refractive index in vertically coupled quantum dot systems |
| 000A04 |
| Ternary semiconductor compounds CuInS2 (CIS) thin films synthesized by electrochemical atomic layer deposition (EC-ALD) |
| 000A50 |
| Scanning capacitance microscopy characterization on diffused p-n junctions of InGaAs/InP infrared detectors |
| 000A53 |
| Research on High-speed Single Photon Detector |
| 000A54 |
| Research of Weapon Equipments Health Monitoring Based on FBG Intelligent Composite Materials |
| 000B06 |
| Large blue shift of the absorption edge in modified potential InGaAs/InAIAs coupled quantum wells |
| 000B15 |
| Intracavity Second Harmonic Generation Characteristics of Semiconductor Disk Laser |
| 000B25 |
| InGaAs detector arrays hermetic encapsulation technology |
| 000B86 |
| Electro-optical effects in strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential |
| 000C33 |
| Adjustment of the selenium amount during ion beam sputtering deposition of CIS thin films |
| 000C37 |
| A study of indium incorporation in In-rich InGaN grown by MOVPE |
| 000C46 |
| A Novel Gas Sensor Used for C2H2 Trace Detection in Power Transformer |
| 000C71 |
| Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD |
| 000D39 |
| Solid source MBE growth of quantum cascade lasers |
| 000D58 |
| Principle and Application of Portable NIR Tea Drinks Analyzer |
| 000D92 |
| OH-absorption properties of the optical damage region in codoped In/Mg:LiNbO3 crystals with various Li/Nb ratios |
| 000D94 |
| Nonlinearities of PIN Photodiodes and PSPICE simulation |
| 000E08 |
| Metamorphic InGaAs telecom lasers on GaAs |
| 000E34 |
| InGaN nanorod arrays grown by molecular beam epitaxy : Growth mechanism structural and optical properties |
| 000E40 |
| Highly efficient four-wave mixing via intersubband transitions in InGaAs/AlAs coupled double quantum well structures |
| 000E41 |
| High-Power Passively Q-Switched Mode-Locking Nd:GdVO4 Laser with LT-InGaAs Saturable Absorber |
| 000E43 |
| High efficiency passively Q-switched mode-locking Nd:GdV04 laser with LT-In0.25Ga0.75As saturable absorber |
| 000E49 |
| Growth and photorefractive properties of near-stoichiometric In:Fe:Cu:LiNbO3 crystals |
| 000E51 |
| Growth and characterization of ZnIn2Se4 buffer layer on CuInSe2 thin films |
| 000E66 |
| Fiber Grating Sensors Demodulation Technique using a Linear Array of Photodetectors |
| 000E76 |
| Fabrication and characterization of CuInS2 films by chemical bath deposition in acid conditions |
| 000F18 |
| Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber |
| 000F19 |
| Diffusion interaction between magnesium and zinc in 650 nm laser diodes wafer |
| 000F29 |
| Defect structure and optical damage resistance of In:Fe:Cu:LiNbO3 crystals |
| 001000 |
| The effects of process parameters on the properties of ITO films grown by ion beam-assisted deposition using 90In-10Sn (wt%) alloy |
| 001029 |
| Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering |
| 001034 |
| Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step |
| 001052 |
| Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing |
| 001070 |
| Performance Analysis of 256 Element Linear 2.4μm InGaAs Photovoltaic Detector Arrays |
| 001078 |
| Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique |
| 001098 |
| Many body interactions and dynamic shift of the absorption resonance wavelength in all-optical polarization switching of InGaAs(P) MQWs |
| 001128 |
| Highly stable white light from ultraviolet laser diode |
| 001133 |
| High Uniformity InGaAs Linear Mesa-type SWIR Focal Plane Arrays |
| 001134 |
| High Power 1064nm Laser Diode Array and Measuring Chip Temperature Based on Emitting Spectra |
| 001155 |
| Enhancement of nonvolatile blue photorefractive properties in LiNbO3:In:Fe:Cu crystals |
| 001161 |
| Electronic structures and optical properties of wurtzite type LiBSe2 (B = Al, Ga, In) : A first-principles study |
| 001225 |
| Analysis on the frequency band of ultra-wide-band electromagnetic radiation from photoconductive semiconductor switches |
| 001235 |
| A strained InGaAs/InAlAs coupled quantum well with polarization-independent large positive electro-refractive index change |
| 001236 |
| A preliminary study on laser-induced damage in InGaAs material and detectors |
| 001246 |
| 256×1 Element Linear InGaAs Short Wavelength near-Infrared Detector Arrays |
| 001254 |
| Ultrafast all-optical polarization switching based on "virtual excitation" of InGaAs(P) MQWs |
| 001310 |
| Shape-controlled synthesis and optical characterization of chalcopyrite CuInS2 micro structures |
| 001328 |
| Photon emitting, absorption and reconstruction of photons |
| 001365 |
| Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes |
| 001395 |
| Gated-mode integrated Single photon detector for telecom wavelengths |
| 001403 |
| Eye-safe compact scanning LIDAR technology |
| 001404 |
| Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings |
| 001410 |
| Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction |
| 001446 |
| Effect of in ions on photorefractive properties in Fe:In:LiNbO3 crystals |
| 001460 |
| Defect solitons in optically induced one-dimensional photonic lattices in LiNbO3:Fe crystal |
| 001515 |
| The surface properties of treated ITO substrates effect on the performance of OLEDs |
| 001526 |
| Synthesis, characterization, and photocatalytic properties of InVO4 nanoparticles |
| 001546 |
| Structural properties of CuInSe2 films prepared by selenization of metallic precursors on MoNx film substrates |
| 001550 |
| Spectral properties and energy transfer of Yb,Er: GdVO4 crystal |
| 001552 |
| Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB) |
| 001568 |
| Polar oscillation and dispersion properties of quasi-confined optical phonon modes in a wurtzite GaN/AlxGa1-xN nanowire |
| 001571 |
| Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition |
| 001583 |
| Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal |
| 001599 |
| Investigation for the high recording sensitivity with two-center recording in LiNbO3:Fe:Ru crystals |
| 001602 |
| Influence of light intensity on crossed-beam photorefractive gratings in doubly doped LiNbO3 crystals |
| 001625 |
| Formation and performances of porous InVO4 films |
| 001628 |
| Ferroelectric properties of BiFeO3 films grown by sol-gel process |
| 001648 |
| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy |
| 001651 |
| Effects of temperature on indium tin oxide particles synthesized by co-precipitation |
| 001657 |
| Effect of [Cu]/[In] ratio on properties of CuInS2 thin films prepared by successive ionic layer absorption and reaction method |
| 001688 |
| Anisotropic growth of In(OH)3 nanocubes to nanorods and nanosheets via a solution-based seed method |
| 001701 |
| Time-dependent transport properties in quantum well with thin inserted layer |
| 001706 |
| The sinusoidal oscillatory diffraction induced by strong refractive index change in reduced Fe:LiNbO3 crystals |
| 001712 |
| The effect of In3+ doping on optical properties of Fe:LiNBO3 crystals |
| 001732 |
| Studies of the third-order nonlinear optical susceptibility for InxGa1-xN/GaN cylinder quantum dots |
| 001749 |
| Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells |
| 001759 |
| Point-defects-induced band edge displacements and band-gap narrowing in CdIn2O4 thin films |
| 001760 |
| Piezoelectric field-dependent optical nonlinearities induced by interband transition in InGaN/GaN quantum well |
| 001764 |
| Passive mode locking of diode-end-pumped Nd:GdVO4 laser with an In0.25Ga0.75As output coupler |
| 001767 |
| Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells |
| 001779 |
| Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates : Strong effect of growth conditions on film structure |
| 001782 |
| Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates |
| 001794 |
| Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures |
| 001803 |
| Hydrothermal synthesis of porous FeIn2S4 microspheres and their electrochemical properties |
| 001809 |
| High power output and temperature characteristics of 1.06μm diode array module |
| 001812 |
| Growth and photorefractive properties of In:Fe:LiNbO3 crystals with various [Li]/[Nb] ratios |
| 001842 |
| Continuous-wave operation quantum cascade lasers at 7.95 μm |
| 001856 |
| An experimental investigation of Zn diffusion into InP and InGaAs |
| 001870 |
| 980 nm QCW high power semiconductor lasers array |
| 001871 |
| 1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001927 |
| The photoemissive effect of the ITO-Cs thin film |
| 001928 |
| The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells |
| 001931 |
| The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction |
| 001946 |
| Study of stimulated emission from InGaN/GaN multiple quantum well structures |
| 001947 |
| Study of photoluminescence and absorption in phase-separation InGaN films |
| 001949 |
| Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide |
| 001952 |
| Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition |
| 001953 |
| Steady-state and small signal analysis of terahertz ballistic tunnel transit-time oscillator |
| 001962 |
| Resonant spin Hall conductance in two-dimensional electron systems with a Rashba interaction in a perpendicular magnetic field |
| 001963 |
| Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure |
| 001965 |
| Propagating optical-phonon modes and their electron-phonon interactions in wurtzite GaN/AlxGa1-xN quantum wells |
| 001970 |
| Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface |
| 001971 |
| Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off |
| 001973 |
| Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer |
| 001975 |
| Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy |
| 001976 |
| Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001977 |
| Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers |
| 001987 |
| MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications |
| 001992 |
| Influence of threading dislocations on the properties of InGaN-based multiple quantum wells |
| 001993 |
| Influence of post-growth treatment on the holographic storage properties of In:Fe:LiNbO3 |
| 001998 |
| InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate |
| 001A00 |
| Hydrothermal synthesis of single crystalline In(OH)3 nanorods and their characterization |
| 001A07 |
| Growth of nanostructures on composition-modulated InAlAs surfaces |
| 001A08 |
| Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD |
| 001A09 |
| Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties |
| 001A10 |
| Growth and optical properties of In:Er:LiNbO3 crystals |
| 001A23 |
| Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas |
| 001A25 |
| Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells |
| 001A26 |
| Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells |
| 001A27 |
| Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots |
| 001A29 |
| Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure |
| 001A30 |
| Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum |
| 001A38 |
| Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method |
| 001A45 |
| An approach to determine the chemical composition in InGaN/GaN multiple quantum wells |
| 001A49 |
| A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics |
| 001A50 |
| 1310 nm AlGaInAs-InP polarization insensitive multiple quantum well optical amplifier |
| 001B27 |
| Thermodynamic analysis on MOVPE growth of Ga1-xInxP semiconductor |
| 001B31 |
| The beam properties of high-power InGaAs/AlGaAs quantum well lasers |
| 001B37 |
| Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures |
| 001B49 |
| Solvothermal synthesis of the ternary semiconductor AInS2(A = Na, K) nanocrystal at low temperature |
| 001B51 |
| Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots |
| 001B56 |
| Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition |
| 001B63 |
| Photo-refractive properties of Mg:In:Fe:LiNbO3 crystal |
| 001B68 |
| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells |
| 001B71 |
| Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures |
| 001B72 |
| Nonvolatile two-color photorefractive holographic recording in In:Ce:Cu :LiNbO3 |
| 001B81 |
| Magnetic properties and giant magnetoresistance in Fe0.35(In2O3)0.65 granular film |
| 001B86 |
| Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells |
| 001B87 |
| Investigation on photorefractive properties of In:Mn:Fe:LiNbO3 |
| 001B91 |
| In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate |
| 001B93 |
| Hydrothermal synthesis and characterization of CuIn2.0Se3.5 nanocrystallites |
| 001C00 |
| Growth and optical properties of In:Nd:LiNbO3 crystals |
| 001C02 |
| Giant magnetoresistance in Fe-In2O3 granular films |
| 001C06 |
| Fanning scattering in LiNbO3 at 750-850 nm induced by femtosecond laser pulses |
| 001C12 |
| Epitaxial growth of high-quality ZnSSe on ZnSSe/In/glass substrate |
| 001C14 |
| Electronic properties of III-V semiconductor heterostructures |
| 001C20 |
| Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures |
| 001C24 |
| Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate |
| 001C25 |
| Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs |
| 001C26 |
| Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer |
| 001C27 |
| Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer |
| 001C30 |
| Cyclotron resonance of polarons in ternary mixed crystals |
| 001C35 |
| Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation |
| 001C43 |
| An increase of photorefractive sensitivity in In:LiNbO3 crystal |
| 001C46 |
| Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer |
| 001C50 |
| A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition |
| 001D13 |
| Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure |
| 001D19 |
| The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells |
| 001D20 |
| The low-frequency electrical noise as reliability estimation for high power semiconductor lasers |
| 001D48 |
| Optical properties of nanocrystalline Ga1-xInxSb/SiO2 films |
| 001D65 |
| Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells |
| 001D67 |
| High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition |
| 001D77 |
| Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films |
| 001D78 |
| Exciton states and interband optical transitions in InGaN quantum dots |
| 001E82 |
| The vertical beam quality of GaInP/AlGaInP strained multiple quantum well laser |
| 001E85 |
| The effects of dopant valence on the structure and electrical conductivity of LaInO3 |
| 001E89 |
| Synthesis and characterization of ternary CuInS2 nanorods via a hydrothermal route |
| 001F01 |
| Studies on incorporation of As2 and As4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy |
| 001F09 |
| Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers |
| 001F14 |
| Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer |
| 001F20 |
| Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures |
| 001F23 |
| Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer |
| 001F33 |
| InGaAs/InGaAsP microdisk lasers grown by GSMBE |
| 001F42 |
| High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets |
| 001F50 |
| Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation |
| 001F63 |
| Demonstrations for optical beam qualities of quantum well lasers |
| 001F66 |
| Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE |
| 001F68 |
| Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures |
| 001F69 |
| Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers |
| 001F70 |
| Angular-dependent photoemission studies of indium tin oxide surfaces |
| 002044 |
| X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb-SiO2 composite films |
| 002053 |
| The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002064 |
| Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots |
| 002069 |
| Second harmonic generation investigation of indium tin oxide thin films |
| 002075 |
| Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size |
| 002080 |
| Photorefractive light-induced scattering in doped lithium niobate crystals |
| 002094 |
| InGaAsP/GaAs SCH SQW laser arrays grown by LPE |
| 002096 |
| ITO films deposited on water-cooled flexible substrate by bias RF Magnetron sputtering |
| 002100 |
| High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers |
| 002103 |
| Growth and characterization of high-quality GaInAs/AlInAs triple wells |
| 002104 |
| Gas source molecular beam epitaxy of InP-based microstructures : material growth, characterization and device applications |
| 002114 |
| Elastic strain in InGaN and AlGaN layers |
| 002116 |
| Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer |
| 002121 |
| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes |
| 002122 |
| Effect of rapid thermal annealing on InGaAs/GaAs quantum wells |
| 002137 |
| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
| 002211 |
| Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion |
| 002215 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002216 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002221 |
| The effect of strain on the miscibility gap in Ga-In-Sb ternary alloy |
| 002223 |
| The catalytic effect of SmInO3 on the gas-sensing properties of CdIn2O4 |
| 002228 |
| Substrate surface atomic structure influence on the growth of InAlAs quantum dots |
| 002232 |
| Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures |
| 002235 |
| Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers : Special issue papers on quantum dots |
| 002241 |
| Self-organization of the InGaAs/GaAs quantum dots superlattice |
| 002242 |
| Self-assembled InAs and In0.9Al0.1As quantum dots on (0 0 1)InP substrates grown by molecular beam epitaxy (MBE) |
| 002243 |
| Room temperature continuous wave visible vertical cavity surface emitting laser |
| 002248 |
| Preparation and gas-sensing properties of NANO-CdIn2O4 material |
| 002249 |
| Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature |
| 002251 |
| Photovoltaic spectroscopy studies of strained InGaAs/GaAs quantum wells |
| 002253 |
| Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots |
| 002257 |
| Optical properties of CuInSe2 film semiconductor studied with potothermal deflection spectroscopy |
| 002267 |
| InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1) |
| 002268 |
| In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates |
| 002271 |
| High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition |
| 002272 |
| GSMBE grown infrared quantum cascade laser structures |
| 002282 |
| Effects of heat treatment on the microstructure of nanophase indium-tin oxide |
| 002347 |
| Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth |
| 002351 |
| The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy |
| 002362 |
| Preparation and optical properties of a SiO2 film containing In0.2Ga0.8As nanocrystals by radio-frequency magnetron co-sputtering |
| 002365 |
| Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells |
| 002366 |
| Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells |
| 002369 |
| Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells |
| 002372 |
| Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities |
| 002373 |
| Optical disk mode pattern of InGaP microdisks emitting at 0.65 μm |
| 002375 |
| Optical absorption spectra of coupled quantum wires InAsxP1-x/InP |
| 002378 |
| Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy |
| 002380 |
| Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy |
| 002381 |
| Microcavity effect and InGaAs/InGaAsP MQW microdisk laser |
| 002386 |
| Linewidth in microdisk laser |
| 002388 |
| Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers |
| 002391 |
| InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy |
| 002394 |
| Hydrothermal synthesis of SrZrO3-α, [Sr1-xZrxO3-α] (M = Al, Ga, In, x ≤ 0.20) series oxides |
| 002399 |
| High power 980 nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion |
| 002405 |
| Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs |
| 002406 |
| Growth and doping characteristics of InGaN films grown by low pressure MOCVD |
| 002421 |
| Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition |
| 002427 |
| Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers |
| 002429 |
| Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice |
| 002486 |
| Study on valence offsets at InxGa1-xAs/InxAl1-xAs heterojunction |
| 002490 |
| Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells |
| 002496 |
| Preparation and properties of indium tin oxide films deposited on polyester substrates by reactive evaporation |
| 002502 |
| Low temperature photoluminescence properties of InGaN films grown on (0 1 1 2) Al203 and (0 0 0 1) Al203 substrates by low pressure movpe |
| 002506 |
| Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures |
| 002510 |
| Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices |
| 002513 |
| GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N Configuration |
| 002518 |
| Electroluminescence from ITO/SiO2/Ta2O5/Al multiple-layer structure excited by hot electrons |
| 002533 |
| Analysis of coupling effect on valence band structures of strained multiple quantum wells |
| 002585 |
| The fabrication of dipped CdS and sputtered ITO thin films for photovoltaic solar cells |
| 002597 |
| Photoluminescence studies of CuInSe2 |
| 002599 |
| Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE |
| 002604 |
| Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells |
| 002607 |
| Monte Carlo simulation of exciton states in spatially separated electron-hole system |
| 002611 |
| Investigation of strain-compensated InGaAs(P)/InGaAs(P)/InP multiple quantum well structures grown by LP-MOVPE |
| 002617 |
| GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells |
| 002622 |
| Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown the molecular beam epitaxy and hydrogen treatment |
| 002679 |
| Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors |
| 002681 |
| Infrared reflection spectra of CdIn2O4 films |
| 002682 |
| Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs |
| 002690 |
| Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator |
| 002695 |
| The near infrared photoluminescence of epitaxial Ga0.5In0.5P |
| 002696 |
| Subpicosecond dynamics spectra in InGaAs/GaAs strained-layer and strained quantum well |
| 002701 |
| Room-temperature excitons in strained InGaAs/GaAs quantum wells |
| 002702 |
| Preparation and properties of transparent conducting indium tin oxide films deposited by reactive evaporation |
| 002703 |
| Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure |
| 002704 |
| Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells |
| 002705 |
| Parity and Wannier-Stark localization in type-II superlattices |
| 002709 |
| Metalorganic chemical vapor deposition of GaxIn1-xSb ternary alloys |
| 002720 |
| Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate |
| 002721 |
| Exciton line broadening in strained InGaAs/GaAs single quantum wells |
| 002722 |
| Effect of persistent photoconductivity on photoconductivity spectra in Ga×In1-×P/InP:Fe (× < 0.18) |
| 002723 |
| Effect of annealing treatment on some properties of CdIn2O4 thin films |
| 002725 |
| Decrease of dislocations in GaAs by isoelectronic doping of liquid phase epitaxial layers |
| 002726 |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 002728 |
| Characterization of InxGa1-xAs/InP epilayers by X-ray double crystal rocking curve peak profile analysis |
| 002731 |
| An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity |
| 002733 |
| A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells |
| 002736 |
| Deep center scattering potential in InGaP |
| 002742 |
| Proposal of interband tunneling structures with strained layers |
| 002745 |
| Window layer for current spreading in AlGaInP light-emitting diode |
| 002746 |
| Flat band current-voltage-temperature method for band-discontinuity determination and its application to strained InxGa1-xAs/In0.52Al0.48As heterostructures |
| 002747 |
| Enhancement of the Stark effect in AlInAs/GaInAs coupled quantum wells and their application to tunable midinfrared photodetectors |
| 002749 |
| Electronic properties of AlxGa1-xSb/InAs quantum wells |
| 002750 |
| Molecular-beam epitaxial growth of InxAl1-xAs on GaAs |
| 002752 |
| Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells |
| 002754 |
| Triply resonant enhancement of third-order nonlinear optical susceptibility in compositionally asymmetric coupled quantum wells |
| 002760 |
| Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures |
| 002761 |
| The geometry of misfit dislocations with respect to the strained interface in [001] In0.1Ga0.9As/GaAs single heterostructures |
| 002762 |
| Mobility enhancement in double δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces |
| 002767 |
| Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor |
| 002769 |
| Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy |
| 002772 |
| Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice |
| 002773 |
| Influences of δ -doping time and spacer thickness on the mobility and two-dimensional electron gas concentration in δ -doped GaAs/InGaAs/GaAs pseudomorphic heterostructures |
| 002775 |
| Comparing reactive ion etching of III-V compounds in Cl2/BCl3/Ar and CCl2F2/BCl3/Ar discharges |
| 002780 |
| The effects of substrate bias and reactive gas partial pressure on the resistivity of sputtered ITO films |
| 002782 |
| The Fermi-edge singularity in CdTe/Cd1-xMnxTe:In multiple quantum wells |
| 002789 |
| Optical studies of strained InGaAs/GaAs single quantum wells |
| 002797 |
| High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy |
| 002808 |
| X-ray characterization of strain relaxation in InGaAs/GaAs strained-layer superlattices |
| 002810 |
| Wannier-Stark localization in InGaAs/GaAs superlattices and its application to electro-optical devices |
| 002820 |
| Structure of InxGa1-xAs/GaAs strained-layer superlattices |
| 002822 |
| Quantitative analysis of InxGa1-xAs by Auger electron spectroscopy |
| 002842 |
| A new one-dimensional compound : synthesis and structure of InNb3(Se2)6 |
