| Ident. | Authors (with country if any) | Title |
|---|
| 000070 |
| Thermoelectric properties of In1.3-xSnxSe prepared by spark plasma sintering method |
| 000214 |
| InP nanowires synthesized via solvothermal process with CTAB assisted |
| 000240 |
| H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors |
| 000247 |
| Fluorine doping inducing high temperature ferromagnetism in (In1-xFex)2O3 |
| 000255 |
| Facile synthesis of ZnS-CdIn2S4-alloyed nanocrystals with tunable band gap and its photocatalytic activity |
| 000303 |
| Controllable preparation of WO3 nanorod arrays by hydrothermal method |
| 000330 |
| Absorption coefficients of In0.8Ga0.2As at room temperature and 77 K |
| 000341 |
| A model for the spectral blueshift caused by the In-N clusters in InxGa1-xNyAs1-y (x < 0.4 and y≤0.04) after annealing |
| 000358 |
| Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field |
| 000366 |
| The structural, elastic and thermodynamical properties of zinc-blend structure InN from first principles |
| 000367 |
| The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition |
| 000377 |
| Temperature-dependent photoluminescence of CuInS2 quantum dots |
| 000378 |
| Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser |
| 000379 |
| Temperature dependent empirical pseudopotential theory for self-assembled quantum dots |
| 000404 |
| Structural features of melts in the In-Bi system |
| 000469 |
| Magnetoresistances in Ni80Fe20-ITO granular film |
| 000472 |
| Magnetic properties and magnetocaloric effects in Gd1-xHoxNiIn intermetallic compounds |
| 000598 |
| Controlled synthesis of luminescent CuInS2 nanocrystals and their optical properties |
| 000672 |
| The influence of annealing temperature on the structural, electrical and optical properties of ion beam sputtered CuInSe2 thin films |
| 000685 |
| Temperature-dependent Raman investigation of CulnS2 with mixed phases of chalcopyrite and CuAu |
| 000717 |
| Shape and crystal phase controlled synthesis of InSe nanocrystals via a simple and facile way |
| 000841 |
| Growth of oriented polycrystalline α-HgI2 films by ultrasonic-wave-assisted physical vapor deposition |
| 000908 |
| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy |
| 000931 |
| Controlled synthesis of Cadmium-Free CuInS2/ZnS Quantum Dots |
| 000945 |
| Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors |
| 000958 |
| Abnormal Resistance and Magnetoresistance Temperature Dependence in Fe-Semiconductor Granular Films |
| 000967 |
| A comparative investigation of trap-limited hole transport properties in organic bulk heterojunctions |
| 000986 |
| Thermal-induced phase transition and assembly of hexagonal metastable In2O3 nanocrystals: A new approach to In2O3 functional materials |
| 000998 |
| The effects of growth parameters on the RF-MBE growth of dilute InNSb films |
| 000A05 |
| Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density |
| 000A06 |
| Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well |
| 000A07 |
| Temperature dependence of magnetoresistance in Co/ITO multilayers |
| 000A18 |
| Synthesis and optical properties of N-In codoped ZnO nanobelts |
| 000B16 |
| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density |
| 000B33 |
| Hydrogen effects on crystallinity, photoluminescence, and magnetization of indium tin oxide thin films sputter-deposited on glass substrate without heat treatment |
| 000B51 |
| Facile synthesis of SnO2 nanograss array films by hydrothermal method |
| 000C17 |
| Correlation between the 3.31-eV emission and the doping level in indium-doped ZnO nanostructures |
| 000C83 |
| The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD |
| 000C95 |
| Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials |
| 000C99 |
| Synthesis, crystal structure and optical properties of an indium phosphate K3In3P4O16 |
| 000D16 |
| Surface characterization of Ag-ITO cermet films prepared by a new sol-gel method |
| 000D21 |
| Study on temperature dependent resistivity of indium-doped cadmium zinc telluride |
| 000D60 |
| Preparation and properties of anti perovskite-type nitrides: InNNi3 and InNCO3 |
| 000D94 |
| Nonlinearities of PIN Photodiodes and PSPICE simulation |
| 000E16 |
| Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition |
| 000E31 |
| Indium Oxide with Novel Morphology: Synthesis and Application in C2H5OH Gas Sensing |
| 000E38 |
| Hydrothermal Syntheses and Structural Diversity of Cobalt Complexes with 2,2'-Bibenzimidazole Ligand by Temperature Tuning Strategy |
| 000E53 |
| Growth and characterization of CuInSe2 thin films prepared by successive ionic layer adsorption and reaction method with different deposition temperatures |
| 000F68 |
| A mini-staged multi-stacked quantum cascade laser for improved optical and thermal performance |
| 001007 |
| Temperature-dependent characteristics of Pt Schottky contacts on n-type HgInTe |
| 001009 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
| 001067 |
| Phase transition, and elastic and thermodynamic properties of InN derived from first-principles and the quasi-harmonic Debye model |
| 001094 |
| Mn-including InAs quantum dots fabricated by Mn implantation |
| 001099 |
| Magnetic property and magnetoresistance in Fe/ITO multilayers |
| 001139 |
| Giant magnetoresistance in Fe/In multilayers and its anomalous temperature dependence |
| 001181 |
| Effects of Eu3+ doping concentration and sintering temperature on fluorescence properties of La3Ga5.5Nb0.5O14 nanoparticles |
| 001207 |
| Compositional and temperature dependence of the energy band gap of CuxInySe2 epitaxial layers |
| 001231 |
| Abnormal rectifying behavior of In/SrTiO3 /SrTiO3:Nb capacitor |
| 001277 |
| Temperature-dependent photoluminescence of undoped, N-doped and N-in codoped ZnO thin films |
| 001315 |
| Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature |
| 001388 |
| Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors |
| 001468 |
| Comparative study on the synthesis, photoluminescence and application in InGaN-based light-emitting diodes of TGA:Ce3+ phosphors |
| 001484 |
| Anomalous photoluminescence of InAs quantum dots implanted by Mn ions |
| 001503 |
| Transport properties of InSb nanowire arrays |
| 001522 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
| 001523 |
| Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation |
| 001524 |
| Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots |
| 001655 |
| Effect of temperature on selenization process of metallic Cu-In alloy precursors |
| 001673 |
| Critical point transitions of wurtzite indium nitride |
| 001687 |
| Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots |
| 001710 |
| The effect of hydrothermal growth temperature on preparation and photoelectrochemical performance of ZnO nanorod array films |
| 001750 |
| Quantitative analysis based on the pair distribution function for understanding the anomalous liquid-structure change in In20Sn80 |
| 001782 |
| Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates |
| 001791 |
| Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001933 |
| Temperature effects on optical properties of InN thin films |
| 001990 |
| Lattice vibrational properties of InN thin films |
| 001996 |
| Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers |
| 001A16 |
| Experimental studies of lattice dynamical properties in indium nitride |
| 001B33 |
| Synthesis and gas sensitivity of In-doped ZnO nanoparticles |
| 001B68 |
| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells |
| 001B74 |
| Nanocrystal size control by bath temperature in electrodeposited CdSe thin films |
| 001B81 |
| Magnetic properties and giant magnetoresistance in Fe0.35(In2O3)0.65 granular film |
| 001B98 |
| Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD |
| 001C08 |
| Fabrication and characterization of indium-doped p-type SnO2 thin films |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 001D30 |
| Substrate dependence of thermal effect on organic light-emitting films |
| 001D64 |
| Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 002113 |
| Electrical resistivity and absolute thermopower of liquid GaSb and InSb alloys |
| 002674 |
| Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch |
| 002709 |
| Metalorganic chemical vapor deposition of GaxIn1-xSb ternary alloys |
| 002737 |
| Tunneling current due to incident electrons derived from the valence bands in AlSb-InAs-AlSb double-barrier structures |
| 002763 |
| GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy |
| 002782 |
| The Fermi-edge singularity in CdTe/Cd1-xMnxTe:In multiple quantum wells |
| 002794 |
| Low temperature electrical transportation behavior of In0.5Ga0.5P |
