| Ident. | Authors (with country if any) | Title |
|---|
| 000075 |
| The investigation of GaInP solar cell grown by all-solid MBE |
| 000084 |
| Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors |
| 000101 |
| Study of Ultraviolet Emission Enhancement in AlxInyGa1-x-yN Quaternary Alloy Film |
| 000103 |
| Structural characterization and electrical and optical properties of V205 films prepared via ultrasonic spraying |
| 000133 |
| Preparation of CuInSe2 thin films by selenization of co-sputtered Cu-In precursors using rapid thermal processing : Solar Energy Generation and Energy Storage |
| 000160 |
| Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy |
| 000161 |
| Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition |
| 000182 |
| Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature |
| 000187 |
| Less contribution of nonradiative recombination in ZnO nails compared with rods |
| 000193 |
| Investigation of copper indium gallium selenide material growth by selenization of metallic precursors |
| 000214 |
| InP nanowires synthesized via solvothermal process with CTAB assisted |
| 000227 |
| Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition |
| 000240 |
| H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors |
| 000270 |
| Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors |
| 000276 |
| Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering |
| 000285 |
| Effect of annealing temperature on surface morphology and work function of ZnO nanorod arrays |
| 000330 |
| Absorption coefficients of In0.8Ga0.2As at room temperature and 77 K |
| 000378 |
| Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser |
| 000382 |
| Tailoring martensitic transformation and martensite structure of NiMnIn alloy by Ga doping In |
| 000396 |
| Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction |
| 000403 |
| Structural, optical and electrical properties of low-temperature deposition Cu(InxGa1-x)Se2 thin films |
| 000576 |
| Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition |
| 000608 |
| Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering |
| 000613 |
| Beneficial effect of Se substitution on thermoelectric properties of Co4Sb11.9-xTexSe0.1 skutterudites |
| 000672 |
| The influence of annealing temperature on the structural, electrical and optical properties of ion beam sputtered CuInSe2 thin films |
| 000681 |
| The compositional segregation, phase structure and properties of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystal |
| 000684 |
| Temperature-dependent linear or nonlinear gas sensing characteristics of In2O3 mixed α-Fe2O3 nanorods with high sensitivity |
| 000700 |
| Syntheses, Characterization, and Properties of Three-Dimensional Pillared Frameworks with Entanglement |
| 000708 |
| Structural and optical properties of Ga2O3:In films deposited on MgO (1 0 0) substrates by MOCVD |
| 000771 |
| One-step synthesis and stabilization of gold nanoparticles and multilayer film assembly |
| 000797 |
| Large-scale fabrication of CdS nanorod arrays on transparent conductive substrates from aqueous solutions |
| 000823 |
| Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers |
| 000841 |
| Growth of oriented polycrystalline α-HgI2 films by ultrasonic-wave-assisted physical vapor deposition |
| 000861 |
| Fabrication and ionic conductivity of amorphous Li-Al-Ti-P-O thin film |
| 000886 |
| Electrochemical synthesis of gold nanoparticles onto indium tin oxide glass and application in biosensors |
| 000904 |
| Effect of nitrogen-doping temperature on the structure and photocatalytic activity of the B,N-doped TiO2 |
| 000922 |
| Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature |
| 000986 |
| Thermal-induced phase transition and assembly of hexagonal metastable In2O3 nanocrystals: A new approach to In2O3 functional materials |
| 000989 |
| Thermal Stability of Barium and Indium Double-Filled Skutterudite Ba0.3In0.2Co3.95Ni0.05Sb12 Coated by SiO2 Nanoparticles |
| 000A05 |
| Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density |
| 000A08 |
| Temperature dependence of hole spin relaxation in ultrathin InAs monolayers |
| 000A37 |
| Structural and physical properties evolution of BaIr1-xMnxO3 solid solutions synthesized by high-pressure sintering |
| 000A69 |
| Photoluminescence investigation of InAs quantum dots in quantum well with different strain reducing layer |
| 000A93 |
| Magnetoresistance in a nominally undoped InGaN thin film |
| 000A94 |
| Magneto-optical absorption by InAs/GaSb-based type II and broken-gap quantum well |
| 000B03 |
| Ligand-Directed Assembly of Asymmetric 1,3,5-Triazine Ligands Containing Pyridyl and Hydroxyl Groups |
| 000B16 |
| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density |
| 000B26 |
| InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy |
| 000B75 |
| Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films |
| 000C34 |
| Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density |
| 000C63 |
| Weak Localization and Electron-Electron Interactions in Indium-Doped ZnO Nanowires |
| 000C68 |
| Two highly connected POM-based hybrids varying from 2D to 3D: The use of the isomeric ligands |
| 000C76 |
| Thermal treatment of indium-doped Cd1-xZnxTe single crystals |
| 000C90 |
| The effect of Sr on the properties of Y-doped ceria electrolyte for IT-SOFCs |
| 000C96 |
| Temperature dependence of terahertz properties for InP |
| 000D19 |
| Substitution effect on the thermoelectric properties of reduced Nb-doped Sr0.95La0.05TiO3 ceramics |
| 000D40 |
| Small angle X-ray scattering studies on structural evolution during calcination of sol-gel ITO nano-powders |
| 000D60 |
| Preparation and properties of anti perovskite-type nitrides: InNNi3 and InNCO3 |
| 000D77 |
| Photocatalytic activities of Ion doped TiO2 thin films when prepared on different substrates |
| 000D81 |
| Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures |
| 000E12 |
| Low-temperature synthesis and characterization of the single chalcopyrite phase CuInS2 compound by vacuum sintering method |
| 000E23 |
| Influence of fuel-to-oxidizer ratio on the magnetic properties of Fe-doped In2O3 nanoparticles synthesized by solution combustion method |
| 000E38 |
| Hydrothermal Syntheses and Structural Diversity of Cobalt Complexes with 2,2'-Bibenzimidazole Ligand by Temperature Tuning Strategy |
| 000E53 |
| Growth and characterization of CuInSe2 thin films prepared by successive ionic layer adsorption and reaction method with different deposition temperatures |
| 000E54 |
| Grazing incidence X-ray scattering study of sol-gel derived indium tin oxide thin films |
| 000E79 |
| Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing |
| 000F06 |
| Effect of annealing temperature on the structure and optical properties of In-doped ZnO thin films |
| 000F33 |
| Crystal Structure of In2O3(ZnO)m Superlattice Wires and Their Photoluminescence Properties |
| 000F53 |
| Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition |
| 000F67 |
| A new kind of peripheral carbazole substituted ruthenium(II) complexes for electrochemical deposition organic light-emitting diodes |
| 000F77 |
| 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration |
| 001008 |
| Temperature dependence of the energy bandgap of HgInTe |
| 001010 |
| Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well |
| 001076 |
| Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures |
| 001330 |
| Photoluminescence of InP nanocrystals embedded in silica gel-glasses as a function of temperature, and excitation power |
| 001388 |
| Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors |
| 001405 |
| Equilateral-triangle-resonator injection lasers with directional emission |
| 001439 |
| Effects of post-heat treatment on the characteristics of chalcopyrite CuInSe2 film deposited by successive ionic layer absorption and reaction method |
| 001477 |
| Catalyst-free synthesis of vertically aligned screw-shape InZnO nanorods array |
| 001486 |
| Anisotropic growth of indium antimonide nanostructures |
| 001507 |
| Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots |
| 001508 |
| Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te)x-(Bi0.5Sb1.5Te3)1- x (x = 0-1.0) alloys prepared by spark plasma sintering |
| 001542 |
| Structure, electrical and optical properties of N-In codoped ZnO thin films prepared by ion-beam enhanced deposition method |
| 001569 |
| Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well |
| 001571 |
| Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition |
| 001577 |
| Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes |
| 001579 |
| Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001580 |
| Optical properties of InN films grown by molecular beam epitaxy at different conditions |
| 001621 |
| Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties |
| 001625 |
| Formation and performances of porous InVO4 films |
| 001636 |
| Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition |
| 001648 |
| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy |
| 001651 |
| Effects of temperature on indium tin oxide particles synthesized by co-precipitation |
| 001655 |
| Effect of temperature on selenization process of metallic Cu-In alloy precursors |
| 001740 |
| Size-controllable growth of Single crystal In(OH)3 and In2O3 nanocubes |
| 001747 |
| Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy |
| 001759 |
| Point-defects-induced band edge displacements and band-gap narrowing in CdIn2O4 thin films |
| 001779 |
| Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates : Strong effect of growth conditions on film structure |
| 001783 |
| Low-temperature growth of InN by MOCVD and its characterization |
| 001803 |
| Hydrothermal synthesis of porous FeIn2S4 microspheres and their electrochemical properties |
| 001831 |
| Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001935 |
| Synthesis of metastable hexagonal In2O3 nanocrystals by a precursor-dehydration route under ambient pressure |
| 001952 |
| Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition |
| 001970 |
| Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface |
| 001975 |
| Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy |
| 001976 |
| Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001992 |
| Influence of threading dislocations on the properties of InGaN-based multiple quantum wells |
| 001A36 |
| Comparison of the thermo- and electro-optical properties of doped and un-doped MOM based PDLCs |
| 001B27 |
| Thermodynamic analysis on MOVPE growth of Ga1-xInxP semiconductor |
| 001B35 |
| Surface melting of polycrystals Pb and In within 1 K below melting temperature |
| 001B84 |
| Localized exciton dynamics in AlInGaN alloy |
| 001C02 |
| Giant magnetoresistance in Fe-In2O3 granular films |
| 001C17 |
| Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells |
| 001C21 |
| Effect of magnetic heat-treatment on magnetic properties and microstructure of Nd10Fe84-xB6Inx(x= 0,1) nanocomposite |
| 001C25 |
| Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs |
| 001C32 |
| Correlation of viscosity and structural changes of indium melt |
| 001C46 |
| Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer |
| 001D17 |
| The structures, electronic states and properties in liquid Ga-Sb and In-Sb systems |
| 001E87 |
| Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers |
| 001F23 |
| Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer |
| 002057 |
| Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution |
| 002064 |
| Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots |
| 002100 |
| High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers |
| 002116 |
| Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer |
| 002134 |
| Carrier mobility distribution in annealed undoped LEC InP material |
| 002225 |
| Temperature and time dependence of the density of molten indium antimonide measured by an improved Archimedean method |
| 002227 |
| Synthesis and structure of indium oxide nanoparticles dispersed within pores of mesoporous silica |
| 002349 |
| Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots |
| 002353 |
| The importance of low-temperature deposition of organic emitting layer on electroluminescent device performance |
| 002365 |
| Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells |
| 002366 |
| Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells |
| 002368 |
| Photoluminescence from InAs quantum dots on GaAs(100) |
| 002492 |
| Structural study of GaSb, InSb melts with XAFS technique |
| 002523 |
| Crystallisation kinetics of substituted InF3 glass by differential scanning calorimetry |
| 002526 |
| Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE |
| 002569 |
| Adatom diffusion on Ge(111) and the corresponding activation energy barrier |
| 002592 |
| Scattering mechanisms of charge carriers in transparent conducting oxide films |
| 002597 |
| Photoluminescence studies of CuInSe2 |
| 002602 |
| Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells |
| 002604 |
| Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells |
| 002618 |
| Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002630 |
| PtGe ohmic contact to n-type InP |
| 002631 |
| Persistent-photoconductivity effect in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures |
| 002632 |
| Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002638 |
| Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers |
| 002651 |
| Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells |
| 002659 |
| Study on symmetry forbidden transitions in an InxGa1-xAs/GaAs single quantum well by temperature dependence |
| 002660 |
| Photoreflectance study on the two-dimensional electron gas of InAlAs/InGaAs heterojunction bipolar transistor grown by molecular beam epitaxy |
| 002669 |
| Sulfide-assisted reordering at the InP surface and SiNx/InP interface |
| 002695 |
| The near infrared photoluminescence of epitaxial Ga0.5In0.5P |
| 002704 |
| Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells |
| 002721 |
| Exciton line broadening in strained InGaAs/GaAs single quantum wells |
| 002736 |
| Deep center scattering potential in InGaP |
| 002746 |
| Flat band current-voltage-temperature method for band-discontinuity determination and its application to strained InxGa1-xAs/In0.52Al0.48As heterostructures |
| 002750 |
| Molecular-beam epitaxial growth of InxAl1-xAs on GaAs |
| 002774 |
| Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa, TMIn, and H2O2 as surge pulses |
| 002781 |
| The Hall factor of hot-electron transport in non-parabolic Kane bands |
| 002795 |
| Influence of the substitution of Y by In on the structure and magnetic property of Y2Cu2O5 |
